Speaker
Description
The OCTOPUS (Optimized CMOS Technology for Precision in Ultra-thin Silicon) project aims
to simulate, develop, and evaluate a new generation of Monolithic Active Pixel Sensors (MAPS)
for high-energy physics, using the TPSCo 65 nm CMOS process. The target specifications
include a spatial resolution of about 3 µm and a time resolution below 5 ns.
This work focuses on the transient simulation of different device structures, comparing five
pixel layouts: standard, n-blanket, n-gap, n-box, and n-opt. For the n-opt layout, additional
variations of the deep n-implant geometry are explored. Transient waveforms are simulated for
each configuration and compared with results from Allpix². The two methods show generally
good agreement, with only minor differences remaining. The study compares the timing
performance of the various layouts and identifies which configurations are most suitable for the
OCTOPUS requirements.