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EDIT 2026 - Lab Preparations
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Europe/Zurich
4/S-030 (CERN)
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09:00
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09:20
Lecture Program 20m
Lectures (Academic, Basic)
• Academic lectures will cover the fundamental concepts of detector technologies such as gaseous, silicon, photon, etc. as well as cross-cutting topics such as signal processing, modeling, and simulation, which are essential for designing, characterizing, and interpreting the performance of detectors and instrumentation.
• Clear connection to the laboratory sessions (almost one to one).
• Two lectures per day.
• Each topic will consist of two hours of lectures, split across two days to facilitate interaction between students and lecturers (including discussions and follow-up on key questions).
• Everyone is encouraged to propose names.Invited Talks (Review, Application-Driven, Future-Oriented)
• Keynote speakers – relevant scientist in the field
• One-hour contributions, approximately one per day.
• Possible topics include: Avenues for the Physics to Come; Particle Accelerators: Past, Present, and Future; State-of-the-Art and Future Perspectives in Tracking, Calorimetry, Timing, and Beam Instrumentation; Engineering and Mechanics of Future Detectors; Neutrino Physics; Physics Beyond Colliders (PBC); Particle Physics and Medical Applications; Applications Beyond HEP; Quantum Technology Sensors.
• Everyone is encouraged to propose topics and speaker names. -
09:20
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09:50
Lab exercises 30m
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Lab 1: Solid State Detectors 10m
Solid-state detector lab exercises for EDIT 2026:
1) Radiation Damage in Silicon Pad Sensors: CV-IV & TCT Characterisation
Tutors: Luca Menzio, Marcos Fernandez Garcia, Eva Sicking, Marie MühlnickelDescription:The lab session illustrates the operation of silicon particle sensors as detectors for ionising radiation. These sensors are based on a diode structure consisting of n- and p-doped silicon layers forming a pn-junction. The test structures consist of heavily doped electrodes (n+ and p+) implanted in a low-doped silicon bulk material.For the operation of a silicon sensor an external reverse bias voltage is applied to form a space charge region. The bias voltage necessary to extend the space charge region over the full thickness of the device is the so-called full depletion voltage Vdep. With increasing bias voltage also the electric field within the depletion region increases.The first part of the lab session (CV/IV measurement) demonstrates the development of the depletion region and the sensors capacitance as a function of the bias voltage. Furthermore, this part includes the determination and calculation of intrinsic sensor parameters relevant for the operation of the sensor such as the effective doping concentration and the electrical resistivity. The second part of the lab session (Transient Current Technique measurement) demonstrates how size and shape of the induced signal vary with bias voltage for front and back side illumination using a red laser with a wavelength of 660 nm. Based on the measurement it becomes possible to calculate the mean velocity of the generated charge carriers.2) Characterisation of silicon pixel detectors
Tutors: Dominik Dannheim, Younes Otarid, Simon Koch
Description:
This laboratory exercise provides an introduction to the technology of silicon pixel detectors. Following a discussion of the basic principles of silicon detectors, a characterisation and analysis setup is used to perform measurements for a Timepix hybrid pixel-detector assembly and analyse the acquired data sets. The measurement program includes electrical characterisations, equalisation and calibration of the detector response using a radioactive photon source, as well as detection of minimum-ionising particles from a radioactive electron source.
3) Energy calibration of a large-scale silicon sensor prototype
Tutors: Nicolas Tiltmann, t.b.c.Description:In the context of the upcoming ALICE Inner Tracking System upgrade (ITS3), a variety of different silicon pixel sensor prototypes have been produced. The MOSS and MOST chips are large-scale, approximately 25.8mm in length, where the MOST features direct output of Time-over-Threshold (ToT) information. In the case of the MOSS, a special readout mode allows for acquisition of the ToT as well. The ToT is most importantly dependent on the charge deposited within one pixel of the sensor. By measuring a ToT-spectrum of a known radioisotope, an energy calibration can be obtained. This enables verification of key parameters such as the injection capacitance of the pixel with respect to its design values. Furthermore, a successful energy calibration allows for the use of the sensor in applications where energy information of traversing or absorbed particles is necessary.Within this exercise, the students will operate a test station for one of these specific sensor prototypes and acquire spectra with a radioactive source. The peaks of the spectrum can then be fitted to evaluate the energy linearity of the sensor. In particular, it can also be checked if the linearity is given in different regions distributed over the full length of the chip. Furthermore, additional peaks can be generated and measured by placing a conversion target between the radioactive source and the sensor.===- All three labs can accommodate 6 students each --> Each lab will be offered on 2-3 afternoons.- Rooms / lab spaces are allocated for each exercise.- A personal radiation dosimeter is required for each lab.- Labs 1 and 2 are based on existing setups from previous schools and summer-student exercises.- Lab 3 (MAPS) is currently in preparation, exact scope (MOSS or MOST) t.b.d.. Main responsible Nicolas Tiltmann will also participate in EDIT 2026 -
Lab 2: Gaseous Detectors 10m
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Lab 3: Photon Detectors 10m
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Lab 4: Signal Processing and Front End Electronics 10m
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Lab 5: Detector Modelling and Simulation 20m
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Lab 6: DAQ and Trigger 10m
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Lab 7: Beam Instrumetation/Radiation Monitoring and Instrumentation 10m
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Lab 8: Visits to mechanics, cooling workshops & DSF 10m
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09:50
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10:10
Discussion 20m
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09:00
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09:20
