Speaker
Christian Gallrapp
(CERN)
Description
The n-in-p silicon technology is a promising candidate for the foreseen upgrade steps of the ATLAS Pixel Detector towards HL-LHC. Due to the radiation hardness and cost effectiveness of this technology, it permits to increase the area covered by pixel detectors.
Characterization and performance results of n-in-p planar pixel sensors produced by CiS (Germany) connected via bump bonding to the ATLAS readout chip FE-I3 will be presented.
The analysis of these devices has been performed before and after irradiation up to a fluence of 1E16 n_eq/cm^2. Charge collection and tracking efficiency studies indicate the functioning of this
technology up to this particle fluence. An overview of the on-going pixel production at CiS for sensors compatible with the new ATLAS readout chip FE-I4 will be included.
Primary authors
Alessandro La Rosa
(Universite de Geneve (CH))
Anna Macchiolo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Christian Gallrapp
(CERN)
Heinz Pernegger
(CERN)
Philipp Weigell
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Rainer Richter
(M)
Dr
Richard Nisius
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
