Speaker
Maurizio Boscardin
(fbk)
Description
We report on the main technological issues related to the optimization of double side 3D detectors for the first production for ATLAS IBL at FBK (Trento, Italy). With respect to the previous versions of this technology we have strongly improved the main electrical properties (i.e. leakage current and breakdown voltage), the yield and the reproducibility. Selected results from the electrical characterization of the processed wafers are reported.
Author
Maurizio Boscardin
(fbk)
