Conveners
Planar Detectors
- Gianluigi Casse (University of Liverpool (GB))
Planar Detectors: Characterization
- Yoshinobu Unno (High Energy Accelerator Research Organization (JP))
Yoshinobu Unno
(High Energy Accelerator Research Organization (JP))
29/02/2012, 15:20
We have been developing highly radiation-tolerant n(+)-in-p silicon planar pixel and microsrip sensors for use in the high-luminosity LHC. Novel n(+)-in-p pixel sensors were made using a combinations of the bias structure of punch-through or polysilicon resistor, the isolation structure of p-stop or p-spray, and the thickness of 320 $\mu$m or 150 $\mu$m.
The strip sensors and associated test...
Takuya Kishida
(Tokyo Institute of Technology (JP))
01/03/2012, 09:30
We have executed a beam test of n-in-p silicon strip sensors aimed for the High Luminosity LHC(HL-LHC) upgrade of the ATLAS SCT(Semi-Conductor Tracker), in Dec. 2011 at Reseach Center for Nuclear Physics (RCNP). The data acquistion system was made of (1) the ABCN chip with a new readout system using an universal read-out board called “SEABAS" and (2) a beam defining telescope with VME readout...
Marko Milovanovic
(Jozef Stefan Institute, Ljubljana)
01/03/2012, 09:55
Effects of long term annealing on charge collection properties of miniature p-type micro-strip detectors, 300 and 150 μm in thickness, irradiated to fluences of 1016 and 5•1015 neq/cm2 with reactor neutrons respectively, were examined by using the Transient Current Technique with Edge-on laser injection (Edge-TCT). The detectors were annealed at 60ºC in steps to an accumulated time of 10240...
Irena Dolenc Kittelmann
(CERN)
01/03/2012, 10:20
A survey of recent activities concerning the edge-TCT measurements and analysis at CERN will be presented. The first part of the talk is focused on annealing study of FZ and MCz strip detectors irradiated with 24GeV/c protons to fluence of 1e16p/cm2. In the second part of this talk two methods are proposed to extract the trapping time profiles from edge-TCT measurements. The first method is...
Igor Mandic
(Jozef Stefan Institute (SI))
01/03/2012, 11:10
In the presentation the results of charge collection measurements with SCT128 chip with HPK mini-strip detector will be shown. First the results with sensor irradiated with pions at PSI and later with neutrons in Ljubljana will be presented. In the second part of the talk the measurements of changes of collected charge and detector current with time will be shown. The detector irradiated...
Mr
Andre Rummler
(Technische Universitaet Dortmund (DE))
01/03/2012, 11:35
ATLAS plans a full replacement of its inner tracker after the end of this decade to cope with luminosities of up to 10E35
cm-2 s-1 at HLLHC. Here, the innermost pixel layer will have to withstand a radiation damage of 2E16 n_eq cm-2.
During the last three years lab characterisation of n+-in-n sensors highly irradiated with neutrons and protons as well as several test beam campaigns were...
Gianluigi Casse
(University of Liverpool (GB))
01/03/2012, 12:00
Daniel Muenstermann
(CERN)
01/03/2012, 12:25
While CMOS processes are cost-efficient and commercially available, they have not yet been used to produce radiation-hard sensors. So-called HV CMOS processes combine a slightly higher resistivity p-type substrate with deep n-wells and allow the combination of a drift-based electron-collecting sensor with active cuircit components while keeping a fill factor of 100%. Achievable depletion...
