Speaker
Description
In this presentation an overview of interconnection technologies for hybrid pixel detectors as used in HEP experiments is given. Since more than twenty years the classical fine-pitch bump bumping with solder (SnAg, Cu pillars) and indium with pitches down to 50 µm or below is the state-of-art technology for hybrid pixel detectors in use for example at all LHC and HL-LHC experiments. But since a decade more modern technologies such as die-to-wafer, wafer-to-wafer bonding in connection with metal direct or polymer-metal-hybrid bonding and 3D integration techniques (TSV, backside RDL) come into the focus which would allow significant improvements in terms of performance, scalability and costs. With such technologies finer pitches down to 10µm or below could be achieved while the material budget of the pixel detectors could be kept very low due to post bonding thinning capabilities. Additional 3D integration features of TSV and RDL enables more integrated module concepts with four-side buttable chips and integrated services chains. On the other hand also more flexible, fast and low cost integration techniques of pixel detectors are investigated for prototyping and small-scale projects. Among possible solutions are in-house techniques like anisotropic conductive film or paste bonding (ACF/ACP) which combine a simple deposition process for the conductive film/paste with high precision flip chip processes usable for fine-pitch application.
In this presentation the advantages, disadvantages, possibilities and problems of these integration technologies are reviewed and discussed not only for larger projects like future vertex detectors at electron or hadron colliders but also for smaller projects and R&D purposes.