17th WG4 General Meeting

Europe/Zurich
Håkan Wennlöf (Nikhef National institute for subatomic physics (NL)), Marco Mandurrino (Universita e INFN Torino (IT))
Description

Meeting Recording available below:

The meeting opened at 15:00 and closed at 15:55.
The number of attendees was stable at 24.

General news:

 

Sebastian Onder presented work Towards a Validated Mobility Model for 4H-SiC Detectors

  • 4H-SiC parameters are inconsistent across literature
  • Measurements for mobility parameters carried out
  • Parameters used in an end-to-end simulation workflow, combining TCAD, Allpix Squared, and QUCS (for front-end electronics simulations)
  • Important to include the inductance of the wirebond in the circuit simulations to reproduce the experimental results fully


Questions and Answers:

  • Håkan W: For the simulations of alpha particle incidence, do you include air in the setup, as this may account a bit for the discrepancy? SO: No, it's in vacuum, but the measurements were also carried out in vacuum.
  • Michael Moll: Why do you use Allpix Squared? Why not just TCAD, to get the transient pulses as well? SO: It is faster, and more flexible. In the end the pulses from simulations match data better when using Allpix Squared, compared to using TCAD. MM: Why is it different? SO: We do not fully know yet.
    • Anastasiia Velyka: The charge deposition you use in TCAD is probably different than what you use in Allpix Squared. The rest should be almost identical.
    • Kevin Heijhoff: TCAD gives  a bit more smeared-out signal also in silicon. The diffusion might be different; there is potentially too much diffusion in TCAD.
  • Anastasiia Velyka: Why do you think that the electric field is not uniform? SO: The doping concentration in the sensor is not fully uniform.
  • Vagelis Gkougkousis: The Cauchy-Thomas mobility model is a low-field experimental fit. It is not valid at high fields, but a different and more sophisticated approach is needed.
    • Kevin H: I don't think sdevice handles this.
    • Anastasiia V: I think it can do.
  • Marco M: You mentioned you need a fine mesh in TCAD. How do you balance it when going to a regularised mesh in Allpix Squared? SO: I use a finer mesh than the finest part in TCAD, and then it's fine, we don't lose any information.

 

 

The conveners will announce the time for the next meeting via email.

Please get in touch if you wish to give a longer presentation.

 

Happy holidays!

There are minutes attached to this event. Show them.
    • 15:00 15:10
      Introduction 10m
      Speakers: Marco Mandurrino (Universita e INFN Torino (IT)), Håkan Wennlöf (Nikhef National institute for subatomic physics (NL))
    • 15:10 16:40
      Updates on Simulations
      • 15:10
        CMOS simulation and connection between device-level and electronics simulations 15m

        monolithic sensor simulations - front-end electronics simulations - signal read-out and processing

        Anastasiia Velyka: 
        •  Working with University of Zürich on using lookup tables to enable a smooth connection between device-level simulations and detector system simulations
        • Optimising the cross layout for optimised charge collection, for the OCTOPUS project. Simulations are being made for pixel sizes between 15 and 50 µm, targeting a possible respin of the 65 nm CIS ER2 submission.

         

      • 15:25
        Other detectors/technologies/activities 15m

        hybrid sensors (LGADs, 3D, strip detectors, …) - process simulation - particle-matter interaction - charge carrier transport

      • 15:40
        Newly measured semiconductor properties 15m

        non-silicon sensors simulation - gain layer/impact ionisation simulation

        Speaker: Sebastian Onder (Austrian Academy of Sciences (AT))
      • 15:55
        Radiation damage: validation with measurements and development of high-fluence models 15m

        definition of benchmark models - high-fluence models - radiation environment simulations

      • 16:10
        Time dependent electric/weighting field 15m

        adaptive fields - signal formation in detectors with resistive electrodes - charge transport

      • 16:25
        Simulation tools development 15m

        integration of simulation tools - machine learning

    • 16:40 17:00
      Discussion and AoB 20m
      Speakers: Håkan Wennlöf (Nikhef National institute for subatomic physics (NL)), Marco Mandurrino (Universita e INFN Torino (IT))