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3:00 PM
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Introduction
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Håkan Wennlöf
(Nikhef National institute for subatomic physics (NL))
Marco Mandurrino
(Universita e INFN Torino (IT))
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3:10 PM
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Updates on Simulations
(until 4:40 PM)
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3:10 PM
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CMOS simulation and connection between device-level and electronics simulations
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3:25 PM
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Other detectors/technologies/activities
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3:40 PM
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Newly measured semiconductor properties
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3:55 PM
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Radiation damage: validation with measurements and development of high-fluence models
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Marco Bomben
(APC & Université Paris Cité, Paris (FR))
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4:10 PM
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Time dependent electric/weighting field
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4:25 PM
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Simulation tools development
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4:40 PM
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Discussion and AoB
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Marco Mandurrino
(Universita e INFN Torino (IT))
Håkan Wennlöf
(Nikhef National institute for subatomic physics (NL))
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