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09:00
FORMATION AND ANNEALING OF INTERSTITIAL DEFECTS IN P-TYPE SILICON AND SILICON-GERMANIUM ALLOYS UNDER ELECTRON AND ALPHA-IRRADIATION
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Leonid Makarenko
(Belarusian state University)
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09:20
Irradiation study on diodes of different silicon materials for the CMS tracker upgrade
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Joachim Erfle
(Hamburg University (DE))
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09:40
Impact of proton irradiations with different particle-energies on the electrical properties of Si-diodes
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Coralie Neubuser
(Hamburg University (DE))
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10:00
Operational conditions for enhancement of collected charge via avalanche multiplication in n-on-p strip detectors
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Elena Verbitskaya
(Ioffe Physical-Technical Institute RAS)
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10:50
Analysis of Edge and Surface TCTs for Irradiated 3D Silicon Strip Detectors
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Graeme Douglas Stewart
(University of Glasgow)
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11:10
Characterization of Micron n-on-p ministrip sensors irradiated with 24 GeV/c protons.
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Nicola Pacifico
(Universite Montpellier II (FR))
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11:30
Charge collection studies on heavily irradiated diodes from the RD50 multiplication run
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Gregor Kramberger
(Jozef Stefan Institute (SI))
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11:50
Thin Irradiated Strip and Pixel Detectors
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Philipp Weigell
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
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12:10
Low cost commercial scanning TCT setup
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Gregor Kramberger
(Jozef Stefan Institute (SI))
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12:30
TCAD Simulation of irradiated Silicon radiation detector using commercial simulation products
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Mathieu Benoit
(CERN LCD)
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14:00
Electric Field Modeling by simulations with ISE-TCAD
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Mercedes Minano Moya
(Universidad de Valencia (ES))
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14:20
Simulation of the Double Peak Effect in irradiated Sensors
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Robert Eber
(KIT - Karlsruhe Institute of Technology (DE))
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14:40
Isolation Characteristics of Silicon Sensors Using Simulation Approach
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Kirti Ranjan
(Delhi University)
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15:00
Discussion - Simulation Working Group
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Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
Vladimir Eremin
(Ioffe Physical Technical Institute of Russian Academy of Scienc)
