A novel Photodetector based on Silicon and Carbon Nanotubes
by
DrMichelangelo Ambrosio(INFN Napoli)
→
Europe/Zurich
B40 S2-A01 (Salle Andersson) (CERN)
B40 S2-A01 (Salle Andersson)
CERN
Description
During the last years, new and interesting heterojunctions have been realized by growing or depositing carbon nanotubes (CNTs) on silicon substrates. The results so far achieved are very interesting for applications in the fields of photodetection and opto-nano-electronics, letting us think that a new era dominated by carbon-based devices is just starting.
In this talk, we report on the features and performance of Silicon-Carbon Nanotubes heterojunctions and on a novel type of photodetectors realized by growing CNTs on silicon substrates. The measured quantum efficiencies above 35% in the near infrared region and about 15% in the near UV region, the robustness and cost-effectiveness in producing large area detection surfaces make such detectors very appealing to various application fields.