Name: 21st RD50 Workshop (CERN)
Start: 2012-11-14T09:00:00+01:00
End: 2012-11-16T13:00:00+01:00
Location: CERN

21st RD50 Workshop (CERN)

from Wednesday, November 14, 2012 (9:00 AM) to Friday, November 16, 2012 (1:00 PM)

Monday, November 12, 2012
Tuesday, November 13, 2012
Wednesday, November 14, 2012
9:00 AM
9:00 AM - 12:10 PM
Contributions

9:00 AM Workshop opening - Michael Moll (CERN) Stephen Gibson (CERN)

9:15 AM Radiation damage effects to the CMS Silicon Tracker - Seth Zenz (Princeton University (US))

9:40 AM ATLAS Pixel Detector radiation damage monitoring with the High Voltage delivery system - Rui Wang (University of New Mexico (US))

10:00 AM Charge Trapping in the Simulation of ATLAS Semi-Conductor Tracker - Marco Filipuzzi (Deutsches Elektronen-Synchrotron (DE))

10:20 AM Radiation damage effects in the LHCb Vertex Locator - Jon Harrison (University of Manchester (GB))

11:10 AM CMS Preshower - Anna Elliott-Peisert (CERN)

11:30 AM Observation of type-inversion in the innermost tracking layer of the ATLAS Pixel Detector - Andre Lukas Schorlemmer (CERN / Georg-August-Universitaet Goettingen (DE)) Stephen Gibson (CERN)

11:50 AM Multi-Project Wafer (MPW) Runs of Full Custom Pitch Adapters - Miguel Ullan Comes (Universidad de Valencia (ES))
12:10 PM Lunch
Lunch
12:10 PM - 1:30 PM
1:30 PM
1:30 PM - 2:00 PM
Contributions

1:30 PM Silicon: survival of the fittest - Erik Heijne (Czech Technical University (CZ))
2:00 PM
2:00 PM - 5:50 PM
Contributions

2:00 PM Electronic properties of vacancy aggregates in n-type silicon for particle detectors - Pawel Kaminski (Institute of Electronic Materials Technology)

2:20 PM Radiation damage in n-type silicon after electron irradiation with energies between 1.5 MeV and 15 MeV - Roxana Radu (Institute for Experimental Physics, Hamburg University)

2:40 PM RADIATION DEFECT TRANSFORMATIONS UNDER ANNEALING OF P-TYPE SILICON - Leonid Makarenko (Belarusian state University)

3:00 PM Evolution of pulsed current and of carrier lifetime characteristics in Si structures during 25 MeV neutrons irradiation using a spallator type source - Eugenijus Gaubas (Vilnius University)

3:20 PM The free carrier transport properties in proton and neutron irradiated Si(Ge) - Juozas Vaitkus (Vilnius University)

4:10 PM Charge carrier detrapping in irradiated silicon sensors after microsecond laser pulses - Markus Gabrysch (CERN)

4:30 PM Measurements on 800 MeV proton irradiated diodes (moved to Thursday morning!) - Alexandra Junkes (Brown University)

4:50 PM MOS Capacitor Displacement Damage Dose (DDD) Dosimeter - Fco.Rogelio Palomo Pinto (University of Sevilla, School of Engineering)

5:10 PM New proton irradiation facility in Ankara - Bilge Demirkoz (Middle East Technical University (TR))

5:20 PM Discussion Session: Materials and Defects - Michael Moll (CERN)
5:50 PM

5:50 PM - 7:40 PM
Thursday, November 15, 2012
9:00 AM
9:00 AM - 3:30 PM
Contributions

9:00 AM Irradiation study on diodes of different silicon materials for the CMS tracker upgrade - Joachim Erfle (Hamburg University (DE))

9:15 AM Impact of proton irradiations on the electrical properties of n-type Si-diodes - Coralie Neubüser (Úniversity of Hamburg)

9:30 AM Measurements on 800 MeV proton irradiated diodes (moved from Wednesday!) - Alexandra Junkes (Brown University)

9:40 AM First investigation of silicon microstrips for the CMS tracker upgrade using edge-TCT - Marcos Fernandez Garcia (Universidad de Cantabria (ES))

10:00 AM Temperature dependence of the bulk current in Si - Alexandre Chilingarov (Lancaster University (GB))

10:20 AM Charge collection studies on heavily irradiated diodes from the RD50 multiplication run (an update) - Gregor Kramberger (Jozef Stefan Institute (SI))

11:10 AM Annealing of Heavy Irradiated n-on-p Diodes at Temperatures 20°, 40°, 60° and 80°C - Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))

11:30 AM TCT measurements with irradiated strip detectors - Igor Mandic (Jozef Stefan Institute (SI))

11:50 AM Electrical characterisation of heavily irradiated microstrip sensors - Alexandre Chilingarov (Lancaster University, UK)

12:10 PM Simulation of irradiated silicon p-bulk sensors - Marco Bomben (Univ. P. et Marie Curie (Paris VI) (FR))

12:30 PM Simulation of electric field profile in Si irradiated detectors with a consideration of carrier generation parameters - Elena Verbitskaya (Ioffe Physical-Technical Institute of Russian Academy of Sciences)

2:00 PM Simulation of an effective 2-trap radiation damage model - Robert Eber (IEKP - KIT)

2:20 PM Double Electric field Peak Simulation of Irradiated Detectors Using TCAD tools - Ashutosh Bhardwaj (University of Delhi (IN))

2:40 PM Simulation of Double Junction using Synopsys TCAD - Michael Moll (CERN)

3:00 PM Discussion on Detector Characterization and Simulations - Eckhart Fretwurst (II. Institut fuer Experimentalphysik) Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)
3:30 PM
3:30 PM - 7:20 PM
Contributions

4:00 PM A Portable Telescope Based on the Alibava System for Test Beam Studies - Manuel Lozano Fantoba (Universidad de Valencia (ES))

4:20 PM Update on thin sensors results (will be shown on Friday afternoon in PPS meeting) - Gianluigi Casse (Uniof Liverpool)

4:35 PM Charge Collection measurements of n-in-p strip detectors after mixed irradiation to HL-LHC fluences and annealing - Susanne Kuehn (Albert-Ludwigs-Universitaet Freiburg (DE))

4:55 PM Bias effects in highly irradiated n+-p silicon microstrip detectors after long term annealing - Marko Milovanovic (Jozef Stefan Institute, Ljubljana)

5:15 PM A Charge Collection Study with Dedicated RD50 Charge Multiplication Sensors - Christopher Betancourt (Freiburg University)

5:35 PM Investigation of Charge Multiplication in Silicon Strip Sensors - Robert Eber (KIT - Karlsruhe Institute of Technology (DE))

5:50 PM Status of the RD50 funding request for "detectors with enhanced multiplication" - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM_CSIC))

6:10 PM Punch through protection of heavily irradiated ATLAS07 mini-sensors. - Jan Bohm (Inst.of Physics AS CR)

6:30 PM Discussion on Full Detector Systems - Gregor Kramberger (Jozef Stefan Institute (SI))
7:20 PM

7:20 PM - 11:59 PM
Friday, November 16, 2012
9:00 AM
9:00 AM - 12:40 PM
Contributions

9:00 AM Non uniform irradaition of CNM 3D sensors for AFP - Andrea Micelli (IFAE Barcelona)

9:20 AM Scribe-Cleave-Passivate (SCP) Slim Edge Technology for Silicon Sensors - Vitaliy Fadeyev (University of California,Santa Cruz (US))

9:40 AM Progress on the Low Resistance Strip Sensors and Slim Edges Combined RD50 Experiment - Victor Hugo Benitez Casma (Universidad de Valencia (ES))

10:00 AM Characterization of thin high irradiated n-in-p planar pixel sensor - Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

10:20 AM Characterization of active edge planar pixels produced at VTT - Anna Macchiolo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

11:10 AM First experience with radiation-hard active sensors in 180 nm HV CMOS technology - Daniel Muenstermann (CERN)

11:30 AM Study of the behaviours of silicon sensor structures, before and after irradiation - Yoshinobu Unno (High Energy Accelerator Research Organization (JP))

11:50 AM The Birmingham Irradiation Facility - Richard French (The University of Sheffield)

12:10 PM RD50 - New structures discussion session - Giulio Pellegrini (Universidad de Valencia (ES))

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