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09:00
Irradiation study on diodes of different silicon materials for the CMS tracker upgrade
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Joachim Erfle
(Hamburg University (DE))
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09:15
Impact of proton irradiations on the electrical properties of n-type Si-diodes
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Coralie Neubüser
(Úniversity of Hamburg)
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09:30
Measurements on 800 MeV proton irradiated diodes (moved from Wednesday!)
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Alexandra Junkes
(Brown University)
-
09:40
First investigation of silicon microstrips for the CMS tracker upgrade using edge-TCT
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Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
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10:00
Temperature dependence of the bulk current in Si
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Alexandre Chilingarov
(Lancaster University (GB))
-
10:20
Charge collection studies on heavily irradiated diodes from the RD50 multiplication run (an update)
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Gregor Kramberger
(Jozef Stefan Institute (SI))
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11:10
Annealing of Heavy Irradiated n-on-p Diodes at Temperatures 20°, 40°, 60° and 80°C
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Marcela Mikestikova
(Acad. of Sciences of the Czech Rep. (CZ))
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11:30
TCT measurements with irradiated strip detectors
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Igor Mandic
(Jozef Stefan Institute (SI))
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11:50
Electrical characterisation of heavily irradiated microstrip sensors
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Alexandre Chilingarov
(Lancaster University, UK)
-
12:10
Simulation of irradiated silicon p-bulk sensors
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Marco Bomben
(Univ. P. et Marie Curie (Paris VI) (FR))
-
12:30
Simulation of electric field profile in Si irradiated detectors with a consideration of carrier generation parameters
-
Elena Verbitskaya
(Ioffe Physical-Technical Institute of Russian Academy of Sciences)
-
14:00
Simulation of an effective 2-trap radiation damage model
-
Robert Eber
(IEKP - KIT)
-
14:20
Double Electric field Peak Simulation of Irradiated Detectors Using TCAD tools
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Ashutosh Bhardwaj
(University of Delhi (IN))
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14:40
Simulation of Double Junction using Synopsys TCAD
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Michael Moll
(CERN)
-
15:00
Discussion on Detector Characterization and Simulations
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Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
Vladimir Eremin
(Ioffe Physical Technical Institute of Russian Academy of Scienc)
