Michael Moll
(CERN),
Sally Seidel
(University of New Mexico (US)),
Wolfgang Rudolph
(Chair, Dept. of Physics and Astronomy, University of New Mexico)
03/06/2013, 09:00
Dr
Robert M. Fleming
(Sandia National Laboratories, , Albuquerque, NM 87185)
03/06/2013, 09:20
We have used deep level trap spectroscopy (DLTS) to study neutron, ion and electron induced traps in Si bipolar transistors and in GaAs diodes. We are specifically interested in the effects of defect clustering on transistor gain as well as correlation of specific defects with device gain.
Roxana Radu
(University of Hamburg)
03/06/2013, 10:20
The work focuses on the study of radiation damage in n-type silicon diodes induced by electrons of different kinetic energies, from 1.5 MeV to 15 MeV, in order to study the differences between point and cluster-related defects. For the characterization of the radiation induced defects the Thermally Stimulated Current (TSC) and Deep Level Transient Spectroscopy (DLTS) methods were used. The...
Prof.
Juozas Vaitkus
(Vilnius University)
03/06/2013, 10:40
Motivation: to predict signal changes and to foresee possible modifications of the detector performance
Comparison of variations of carrier drift and recombination characteristics during neutron and proton irradiations in situ and afterwards.
Comparative analysis of evolution of the carrier recombination characteristics
Sinan Sagir
(Brown University (US))
03/06/2013, 11:00
Pad sensors made of n-type Magnetic Czochralski (MCz), FLoat Zone (FZ) and Epitaxially (Epi) grown silicon of different thicknesses (150 um to 300 um) were irradiated with 800 MeV protons at the LANSCE proton facility (Los Alamos). The change of the effective doping concentration resulting from the radiation damage was analyzed and Space Charge Sign Inversion (SCSI) to a p-type-like sensor...
Hannes Neugebauer
(Hamburg University (DE))
03/06/2013, 11:20
For the evaluation of a detector in high energy physics the deep understanding of the underlying physics is essential. Micron detectors of different silicon types (FZ, MCz, n-bulk, p-bulk) provided by the RD50 collaboration have been irradiated with 24GeV protons at CERN PS up to fluences of 3e16 neq/cm2. After a first annealing of 80min at 60°C characteristics of the leakage current (IV), the...
25.
Extraction of electric field of non-irradiated microstrip detectors using the edge-TCT technique
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
03/06/2013, 11:40
Edge-TCT is a transient current technique in microstrip detectors where charge carriers are injected from the side of the detector, instead of from the top or bottom. Current transients are measured as a function of depth, therefore charge collection efficiency and instant drift velocity can be profiled. Studying the collection time of the carriers as a function of depth we can extract...
Michael Moll
(CERN)
03/06/2013, 12:00
Igor Gorelov
(University of New Mexico (US))
03/06/2013, 14:00
The current measurement system probes directly the leakage current
in pixel sensors. The system is integrated with the ATLAS Pixel high
voltage delivery system. The system runs as a monitor of a radiation
damage of the pixel sensors. The leakage current data collected for
the completed data taking period are analyzed. The recent status of
the sensor's radiation damage and a comparison...
Taka Kondo
(High Energy Accelerator Research Organization (JP))
03/06/2013, 14:30
The Silicon micro-strip tracker (SCT) of the ATLAS experiment at LHC has
been running for physics at 7 and 8 TeV over 3 years. The integrated
delivered luminosity to ATLAS is 29.5 fb-1 and the fluence at the inner
most SCT modules corresponds to about 5e12 1MeV-equivalent neutrons/cm**
2, the level below the type inversion. More than 99% of 4088 modules
areactive with very high...
Zhou Xing
(Syracuse University (US))
03/06/2013, 15:30
The LHCb experiment is dedicated to searching for New Physics effects in the heavy flavour sector, precise measurements of CP violation and rare heavy meson decays. The LHCb VELO (VErtex LOcator) silicon micro-strip detector is the highest precision vertex detector at the LHC and is located at only 8 mm from the proton beams. Consequently the sensors receive a large and non uniform radiation...
Konstantin Toms
(University of New Mexico (US))
03/06/2013, 16:00
Mrs
Maria Golovleva
(Lappeenranta Univ. of Technology)
04/06/2013, 09:00
A simulation of a simple pad silicon detector and strip detector containing two defects: deep donor (Ev+0.48 eV) and deep acceptor (Ec-0.595 eV) was performed using Silvaco TCAD software package. The sensor modeling parameters were taken from the RD50 Detector Simulation Group task. The electric field distributions at different reverse bi-ases, fluences and detector operational temperatures...
Robert Eber
(KIT - Karlsruhe Institute of Technology (DE))
04/06/2013, 09:20
An effective 2-defect model for HPK sensors currently under investigation for the upgrade of the CMS tracker has been develped on the basis of the EVL model. With this model it is possible to describe not only the basic parameters as leakage current and depletion voltage, but also the time evolution of transient pulses as well as charge collection efficiency. The parameters for this model are...
Prof.
Juozas Vaitkus
(Vilnius University (LT))
04/06/2013, 09:25
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
04/06/2013, 09:40
20 min
Edge-TCT provides a method for the measurement of the drift velocity of the charge carriers as a function of depth. This could make it possible to extract electric field distribution in the detector.
Comparison of edge-TCT simulations with measurements will be presented.
Interstrip resistance can be measured by Induced Current Method, where DC voltage is applied to one strip and the...
Dr
Salvador Hidalgo
(Centro Nacional de Microelectrónica (IMB-CNM-CSIC))
04/06/2013, 10:30
We will present the first measurements and the technology developed for the fabrication of Low Gain Avalanche Detectors (LGAD) for tracking applications.
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
04/06/2013, 10:45
20 min
LGAD produced at CNM-Barcelona were measured at IFCA-Santander using red-TCT. The gain factor is estimated for these measurements. A toy simulation was used to qualitatively explain the results.
Colin Parker
(University of California, Santa Cruz (US))
04/06/2013, 11:00
Currently in development, 4D sensors with fast timing and fine spatial resolution rely on short charge collection times in thin devices. They will benefit from signal gain made possible by a region with high electric field inside the device. The region is created by two layers of implant doping stacked on top of each other. As a result, sensor IV and CV characteristics deviate from those of...
Scott Ely
(SCIPP)
04/06/2013, 11:20
We recorded the pulse shapes of Am(241) alpha particles in CNM diodes with and without gain, to understand the time structure of the charge collection in diodes optimized for gain.
Gregor Kramberger
(Jozef Stefan Institute (SI))
04/06/2013, 11:40
A diodes with implantation profile designed to provoke avalanche multiplication were produced by CNM withing the framework of RD50 project. Charge collection properties of non-irradiated and neutron irradiated diodes were measured with 90Sr electrons and investigated with Transient current technique. Dependence of gain, current and noise on fluence and voltage will be presented.
Sven Wonsak
(University of Liverpool (GB))
04/06/2013, 12:00
In this talk the combined results of dedicated charge multiplication sensors, produced by MICRON (UK) within the CERN RD50 framework, and measured at Freiburg and Liverpool are presented. The sensors vary in device thickness, in strip pitch and width as well as in diffusion times and energies for the implantation process. Some of the sensors have additional intermediate strips (biased or...
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
04/06/2013, 12:20
A review of the UFSD prospects taking into account the new charge collection data taken with CNM diodes with gain.
Robert Eber
(KIT - Karlsruhe Institute of Technology (DE))
04/06/2013, 14:00
N-in-p Micron sensors provided by the RD50 collaboration have been irradiated with protons or neutrons up to a fluence of 5e16neq/cm2. After irradiation, an annealing study of signal, signal to noise and leakage current has been performed with the ALiBaVa setup at different annealing steps up to 500 days at room temperature.
A sample irradiated with neutrons to 5e15neq/cm2 and narrow strip...
Giulio Pellegrini
(Universidad de Valencia (ES))
04/06/2013, 14:20
Giulio Pellegrini
(Universidad de Valencia (ES))
04/06/2013, 14:30
Dr
Virginia Greco
(Centro Nacional Microelectronica (IMB-CNM-CSIC))
04/06/2013, 14:50
We will present the first results of n-on-p 3D strip detectors irradiated in Ljubljana at 10*17 n/cm2.
Alyssa Montalbano
(State University of New York (US))
04/06/2013, 15:10
With the need for very radiation hard semiconductor devices for the High Luminosity upgrade at the Large Hadron Collider, new types of silicon pixel detectors have been proposed. Since 3D Si pixel detectors have been shown to be more radiation hard than the planar ones, scientists at Brookhaven National Laboratory have chosen to design a novel type of 3D Si pixel detectors. Systematic full 3D...
Vitaliy Fadeyev
(University of California,Santa Cruz (US))
04/06/2013, 16:20
We are pursuing a “slim edge” technology which allows a drastic reduction of inactive region along the perimeter of silicon detectors. Such reduction would benefit construction of large-area tracker and imaging systems. Key components of this method are surface scribing, cleaving, and passivation of the resulting sidewall. We will give a short overview of the project and describe recent...
Victor Hugo Benitez Casma
(Universidad de Valencia (ES))
04/06/2013, 16:40
A status report will be presented on the Common RD50 Project "Low Resistance Strip Sensors". Three RD50 institutes are collaborating in this project (CNM-Barcelona, IFIC-Valencia, and SCIPP-Santa Cruz), in which a new method to enhance the sensor hardness to beam-loss damage is studied. The key feature of the method is implementation low-resistance implants. The fabrication has been combined...
Igor Mandic
(Jozef Stefan Institute (SI))
04/06/2013, 17:00
In this contribution, TCT measurements with p-type strip detectors in which one edge was cut with Scribe Cleave Passivate (SCP) technique will be presented. CCE measurements were made with focused infrared laser beam. The beam was scanned across the detector surface near the SCP edge. Measurements were performed also with focused red laser beam. The red laser light was directed to the cleaved...
Giulio Pellegrini
(Universidad de Valencia (ES))
04/06/2013, 17:20
Joachim Erfle
(Hamburg University (DE))
05/06/2013, 09:00
The aim of the CMS tracker upgrade campaign is to find a new radiation hard sensor material for the HL-LHC upgrade of the CMS tracker. Different test structures and sensors were implemented on a variety of silicon materials with different thicknesses by Hamatsu Photonics, Japan. Samples have been irradiated to fluences up to 3E15 with protons at Karlsruhe and the CERN PS and with reactor...
Lenny Spiegel
(Fermi National Accelerator Lab. (US))
05/06/2013, 09:20
There are a number of plausible candidates for sensor types in the outer regions of HL-LHC trackers, where issues of cost and ease of construction must also be taken into consideration given the very large number of sensors that are required. Over the last couple of years, the CMS experiment has undertaken 4 beam tests to probe the radiation hardness of prototype strip sensors procured from a...
Alex Edward Garabedian
(Brown University (US))
05/06/2013, 09:40
CMS plans to increase both its luminosity and center of mass energy in future upgrades. As such, more radiation hard silicon must be used for the inner tracker. The HPK campaign aims to determine which sensor material, polarity and geometries will work best under these high radiation conditions. One of Brown Universities' contributions to this project includes charge collection efficiency...
Stefano Terzo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
05/06/2013, 10:00
Silicon pixel modules employing n-in-p planar sensors with an active thickness of 150µm were assembled with the new FE-I4 ATLAS readout chips an irradiated up to a fluence of 4e16 n_eq cm^-2
These thin sensors are designed as candidates for the ATLAS pixel detector upgrade at HL-LHC, as they ensure radiation hardness at high fluences.
High precision beam test measurements of the hit...
Anna Macchiolo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
05/06/2013, 10:50
We will report about the characterization of FE-I3 and FE-I4 active edge planar n-in-p pixels produced at VTT, Finland. The sensor thickness is 100 um and different geometries of the sensor edges have been implemented, down to an inactive width of only 50 um. The charge collection properties before and after irradiation have been studied with radioactive sources and analysis of beam tests at...
Dean Charles Forshaw
(University of Liverpool (GB))
05/06/2013, 11:10
A test beam telescope has been built using the ALIBAVA system to drive its
data acquisition. The basic telescope planes consist in four XYT stations. Each
station is built from a detector board with two 80-micron-pitch sensors,
mounted one in each side and their strips crossing at 90 degrees. The
ensemble is coupled to an ALIBAVA daughter board. These stations act as
reference frame and...
Vitaliy Fadeyev
(University of California,Santa Cruz (US))
05/06/2013, 11:30
We are working on the proposed "BeamCal" project. Its goal is to detect scattered incoming beams at ILC at small angles, to prevent the background from two-photon processes to mimic signatures of new discoveries. The detector, which is envisioned as a tungsten sandwich calorimeter, will be subject to high fluences EM radiation that will shower in the tungsten radiator. We plan to do studies...
Daniel Muenstermann
(Universite de Geneve (CH))
05/06/2013, 11:50
We explore the concept of using a deep-submicron HV CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a traditional (pixel or strip) readout chip. This approach yields most advantages of MAPS (improved resolution, reduced cost and material budget,...
Ulrich Parzefall
(Albert-Ludwigs-Universitaet Freiburg (DE))
05/06/2013, 12:10
The Real Time Wide Area Radiation Surveillance System (REWARD) is a novel mobile system for radiation detection and monitoring based on the integration of two new miniaturized solid-state radiation sensors. One sensor is a Cadmium-Zink-Telluride ((Cd,Zn)Te or CZT) detector for gamma radiation with precise energy measurement to identify the emitting isotope. The CZT detector unit is made in...
Gregor Kramberger
(Jozef Stefan Institute (SI))
05/06/2013, 12:30
Taka Kondo
(High Energy Accelerator Research Organization (JP))
20 min
The Silicon micro-strip tracker (SCT) of the ATLAS experiment at LHC has
been running for physics at 7 and 8 TeV over 3 years. The integrated
delivered luminosity to ATLAS is 29.5 fb-1 and the fluence at the inner
most SCT modules corresponds to about 5e12 1MeV-equivalent neutrons/cm**
2, the level below the type inversion. More than 99% of 4088 modules
areactive with very high...
