22nd RD50 Workshop (Albuquerque, USA)

Systematic investigation of p-irradiated Micron pad detectors of different silicon materials

3 Jun 2013, 11:20

20m

Student Union Building (University of New Mexico)

Session I

Speaker

Hannes Neugebauer (Hamburg University (DE))

Description

For the evaluation of a detector in high energy physics the deep understanding of the underlying physics is essential. Micron detectors of different silicon types (FZ, MCz, n-bulk, p-bulk) provided by the RD50 collaboration have been irradiated with 24GeV protons at CERN PS up to fluences of 3e16 neq/cm2. After a first annealing of 80min at 60°C characteristics of the leakage current (IV), the capacitance (CV) and the effective doping concentration (Neff) were systematically analysed dependent on the fluence and the temperature. Furthermore signals of the transient current technique (TCT) are used to investigate the charge collection efficiency (CCE). Results of these studies will be presented in the talk.

Presentation materials

Slides

130603_22nd_RD50_Neugebauer.pdf