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22nd RD50 Workshop (Albuquerque, USA)

3–5 Jun 2013
University of New Mexico
US/Mountain timezone

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Session

Session 3:

4 Jun 2013, 09:00
Student Union Building (University of New Mexico)

Student Union Building

University of New Mexico

Albuquerque, New Mexico, USA

Conveners

Session 3:: Simulations and Charge Multiplication

  • Alexandra Junkes (Brown University)

Presentation materials

There are no materials yet.

  1. 0. Simulation of Double Junction in Irradiated Detectors Using Silvaco TCAD
    Mrs Maria Golovleva (Lappeenranta Univ. of Technology)
    04/06/2013, 09:00
    A simulation of a simple pad silicon detector and strip detector containing two defects: deep donor (Ev+0.48 eV) and deep acceptor (Ec-0.595 eV) was performed using Silvaco TCAD software package. The sensor modeling parameters were taken from the RD50 Detector Simulation Group task. The electric field distributions at different reverse bi-ases, fluences and detector operational temperatures...
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  2. 7. Simulation of CV, TCT and CCE with an effective 2-defect model (moved to Wednesday)
    Robert Eber (KIT - Karlsruhe Institute of Technology (DE))
    04/06/2013, 09:20
    An effective 2-defect model for HPK sensors currently under investigation for the upgrade of the CMS tracker has been develped on the basis of the EVL model. With this model it is possible to describe not only the basic parameters as leakage current and depletion voltage, but also the time evolution of transient pulses as well as charge collection efficiency. The parameters for this model are...
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  3. 48. p-n-n+ diode CV characteristics changes at various contract and body doping concentrations. TCAD simulations
    Prof. Juozas Vaitkus (Vilnius University (LT))
    04/06/2013, 09:25
  4. 38. Simulations of edge-TCT and 2-defect model CCE
    Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))
    04/06/2013, 09:40
    20 min
    Edge-TCT provides a method for the measurement of the drift velocity of the charge carriers as a function of depth. This could make it possible to extract electric field distribution in the detector. Comparison of edge-TCT simulations with measurements will be presented. Interstrip resistance can be measured by Induced Current Method, where DC voltage is applied to one strip and the...
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  5. 4. Simulation and Technology developments of Low Gain Avalanche Detectors (LGAD) for High Energy Physics applications
    Dr Salvador Hidalgo (Centro Nacional de Microelectrónica (IMB-CNM-CSIC))
    04/06/2013, 10:30
    We will present the first measurements and the technology developed for the fabrication of Low Gain Avalanche Detectors (LGAD) for tracking applications.
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  6. 44. Red TCT measurements of Low Gain Avalanche Diodes (LGAD) produced at CNM-Barcelona
    Marcos Fernandez Garcia (Universidad de Cantabria (ES))
    04/06/2013, 10:45
    20 min
    LGAD produced at CNM-Barcelona were measured at IFCA-Santander using red-TCT. The gain factor is estimated for these measurements. A toy simulation was used to qualitatively explain the results.
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  7. 33. Simulation of Gain-Optimized Sensors
    Colin Parker (University of California, Santa Cruz (US))
    04/06/2013, 11:00
    Currently in development, 4D sensors with fast timing and fine spatial resolution rely on short charge collection times in thin devices. They will benefit from signal gain made possible by a region with high electric field inside the device. The region is created by two layers of implant doping stacked on top of each other. As a result, sensor IV and CV characteristics deviate from those of...
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  8. 13. Pulse shapes of alpha particles in CNM diodes with and without gain
    Scott Ely (SCIPP)
    04/06/2013, 11:20
    We recorded the pulse shapes of Am(241) alpha particles in CNM diodes with and without gain, to understand the time structure of the charge collection in diodes optimized for gain.
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  9. 28. Studies of CNM diodes with gain
    Gregor Kramberger (Jozef Stefan Institute (SI))
    04/06/2013, 11:40
    A diodes with implantation profile designed to provoke avalanche multiplication were produced by CNM withing the framework of RD50 project. Charge collection properties of non-irradiated and neutron irradiated diodes were measured with 90Sr electrons and investigated with Transient current technique. Dependence of gain, current and noise on fluence and voltage will be presented.
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  10. 21. Combined Measurement Results of dedicated RD50 Charge Multiplication Sensors
    Sven Wonsak (University of Liverpool (GB))
    04/06/2013, 12:00
    In this talk the combined results of dedicated charge multiplication sensors, produced by MICRON (UK) within the CERN RD50 framework, and measured at Freiburg and Liverpool are presented. The sensors vary in device thickness, in strip pitch and width as well as in diffusion times and energies for the implantation process. Some of the sensors have additional intermediate strips (biased or...
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  11. 23. Ultra-Fast Silicon Sensors based on Charge Multiplication, an Update
    Hartmut Sadrozinski (SCIPP, UC santa Cruz)
    04/06/2013, 12:20
    A review of the UFSD prospects taking into account the new charge collection data taken with CNM diodes with gain.
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Building timetable...