Conveners
Session 3:: Simulations and Charge Multiplication
- Alexandra Junkes (Brown University)
Mrs
Maria Golovleva
(Lappeenranta Univ. of Technology)
04/06/2013, 09:00
A simulation of a simple pad silicon detector and strip detector containing two defects: deep donor (Ev+0.48 eV) and deep acceptor (Ec-0.595 eV) was performed using Silvaco TCAD software package. The sensor modeling parameters were taken from the RD50 Detector Simulation Group task. The electric field distributions at different reverse bi-ases, fluences and detector operational temperatures...
Robert Eber
(KIT - Karlsruhe Institute of Technology (DE))
04/06/2013, 09:20
An effective 2-defect model for HPK sensors currently under investigation for the upgrade of the CMS tracker has been develped on the basis of the EVL model. With this model it is possible to describe not only the basic parameters as leakage current and depletion voltage, but also the time evolution of transient pulses as well as charge collection efficiency. The parameters for this model are...
Prof.
Juozas Vaitkus
(Vilnius University (LT))
04/06/2013, 09:25
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
04/06/2013, 09:40
20 min
Edge-TCT provides a method for the measurement of the drift velocity of the charge carriers as a function of depth. This could make it possible to extract electric field distribution in the detector.
Comparison of edge-TCT simulations with measurements will be presented.
Interstrip resistance can be measured by Induced Current Method, where DC voltage is applied to one strip and the...
Dr
Salvador Hidalgo
(Centro Nacional de Microelectrónica (IMB-CNM-CSIC))
04/06/2013, 10:30
We will present the first measurements and the technology developed for the fabrication of Low Gain Avalanche Detectors (LGAD) for tracking applications.
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
04/06/2013, 10:45
20 min
LGAD produced at CNM-Barcelona were measured at IFCA-Santander using red-TCT. The gain factor is estimated for these measurements. A toy simulation was used to qualitatively explain the results.
Colin Parker
(University of California, Santa Cruz (US))
04/06/2013, 11:00
Currently in development, 4D sensors with fast timing and fine spatial resolution rely on short charge collection times in thin devices. They will benefit from signal gain made possible by a region with high electric field inside the device. The region is created by two layers of implant doping stacked on top of each other. As a result, sensor IV and CV characteristics deviate from those of...
Scott Ely
(SCIPP)
04/06/2013, 11:20
We recorded the pulse shapes of Am(241) alpha particles in CNM diodes with and without gain, to understand the time structure of the charge collection in diodes optimized for gain.
Gregor Kramberger
(Jozef Stefan Institute (SI))
04/06/2013, 11:40
A diodes with implantation profile designed to provoke avalanche multiplication were produced by CNM withing the framework of RD50 project. Charge collection properties of non-irradiated and neutron irradiated diodes were measured with 90Sr electrons and investigated with Transient current technique. Dependence of gain, current and noise on fluence and voltage will be presented.
Sven Wonsak
(University of Liverpool (GB))
04/06/2013, 12:00
In this talk the combined results of dedicated charge multiplication sensors, produced by MICRON (UK) within the CERN RD50 framework, and measured at Freiburg and Liverpool are presented. The sensors vary in device thickness, in strip pitch and width as well as in diffusion times and energies for the implantation process. Some of the sensors have additional intermediate strips (biased or...
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
04/06/2013, 12:20
A review of the UFSD prospects taking into account the new charge collection data taken with CNM diodes with gain.
