22nd RD50 Workshop (Albuquerque, USA)

Session

Session I

3 Jun 2013, 09:00

Student Union Building (University of New Mexico)

Conveners

Session I: Opening & Defect and Material Characterization

• Michael Moll (CERN)

30. Workshop opening

Michael Moll (CERN), Sally Seidel (University of New Mexico (US)), Wolfgang Rudolph (Chair, Dept. of Physics and Astronomy, University of New Mexico)

03/06/2013, 09:00

29. Radiation-Induced Trap Spectroscopy in Si Bipolar Transistors and GaAs Diodes

Dr Robert M. Fleming (Sandia National Laboratories, , Albuquerque, NM 87185)

03/06/2013, 09:20

We have used deep level trap spectroscopy (DLTS) to study neutron, ion and electron induced traps in Si bipolar transistors and in GaAs diodes. We are specifically interested in the effects of defect clustering on transistor gain as well as correlation of specific defects with device gain.

9. Studies on n-type silicon after electron irradiation

Roxana Radu (University of Hamburg)

03/06/2013, 10:20

The work focuses on the study of radiation damage in n-type silicon diodes induced by electrons of different kinetic energies, from 1.5 MeV to 15 MeV, in order to study the differences between point and cluster-related defects. For the characterization of the radiation induced defects the Thermally Stimulated Current (TSC) and Deep Level Transient Spectroscopy (DLTS) methods were used. The...

5. Evolution of carrier lifetime characteristics in Si structures during and post-irradiated by neutrons and protons

Prof. Juozas Vaitkus (Vilnius University)

03/06/2013, 10:40

Motivation: to predict signal changes and to foresee possible modifications of the detector performance Comparison of variations of carrier drift and recombination characteristics during neutron and proton irradiations in situ and afterwards. Comparative analysis of evolution of the carrier recombination characteristics

2. Radiation damage induced by 800 MeV protons in silicon pad diodes

Sinan Sagir (Brown University (US))

03/06/2013, 11:00

Pad sensors made of n-type Magnetic Czochralski (MCz), FLoat Zone (FZ) and Epitaxially (Epi) grown silicon of different thicknesses (150 um to 300 um) were irradiated with 800 MeV protons at the LANSCE proton facility (Los Alamos). The change of the effective doping concentration resulting from the radiation damage was analyzed and Space Charge Sign Inversion (SCSI) to a p-type-like sensor...

32. Systematic investigation of p-irradiated Micron pad detectors of different silicon materials

Hannes Neugebauer (Hamburg University (DE))

03/06/2013, 11:20

For the evaluation of a detector in high energy physics the deep understanding of the underlying physics is essential. Micron detectors of different silicon types (FZ, MCz, n-bulk, p-bulk) provided by the RD50 collaboration have been irradiated with 24GeV protons at CERN PS up to fluences of 3e16 neq/cm2. After a first annealing of 80min at 60°C characteristics of the leakage current (IV), the...

25. Extraction of electric field of non-irradiated microstrip detectors using the edge-TCT technique

Marcos Fernandez Garcia (Universidad de Cantabria (ES))

03/06/2013, 11:40

Edge-TCT is a transient current technique in microstrip detectors where charge carriers are injected from the side of the detector, instead of from the top or bottom. Current transients are measured as a function of depth, therefore charge collection efficiency and instant drift velocity can be profiled. Studying the collection time of the carriers as a function of depth we can extract...

31. Discussion on Defects and Material Characterization

Michael Moll (CERN)

03/06/2013, 12:00