Conveners
Session 4: Charge multiplication and 3D sensors: Charge Multiplication and 3D sensors
- Gregor Kramberger (Jozef Stefan Institute (SI))
Robert Eber
(KIT - Karlsruhe Institute of Technology (DE))
04/06/2013, 14:00
N-in-p Micron sensors provided by the RD50 collaboration have been irradiated with protons or neutrons up to a fluence of 5e16neq/cm2. After irradiation, an annealing study of signal, signal to noise and leakage current has been performed with the ALiBaVa setup at different annealing steps up to 500 days at room temperature.
A sample irradiated with neutrons to 5e15neq/cm2 and narrow strip...
Giulio Pellegrini
(Universidad de Valencia (ES))
04/06/2013, 14:20
Giulio Pellegrini
(Universidad de Valencia (ES))
04/06/2013, 14:30
Dr
Virginia Greco
(Centro Nacional Microelectronica (IMB-CNM-CSIC))
04/06/2013, 14:50
We will present the first results of n-on-p 3D strip detectors irradiated in Ljubljana at 10*17 n/cm2.
Alyssa Montalbano
(State University of New York (US))
04/06/2013, 15:10
With the need for very radiation hard semiconductor devices for the High Luminosity upgrade at the Large Hadron Collider, new types of silicon pixel detectors have been proposed. Since 3D Si pixel detectors have been shown to be more radiation hard than the planar ones, scientists at Brookhaven National Laboratory have chosen to design a novel type of 3D Si pixel detectors. Systematic full 3D...
Vitaliy Fadeyev
(University of California,Santa Cruz (US))
04/06/2013, 16:20
We are pursuing a “slim edge” technology which allows a drastic reduction of inactive region along the perimeter of silicon detectors. Such reduction would benefit construction of large-area tracker and imaging systems. Key components of this method are surface scribing, cleaving, and passivation of the resulting sidewall. We will give a short overview of the project and describe recent...
Victor Hugo Benitez Casma
(Universidad de Valencia (ES))
04/06/2013, 16:40
A status report will be presented on the Common RD50 Project "Low Resistance Strip Sensors". Three RD50 institutes are collaborating in this project (CNM-Barcelona, IFIC-Valencia, and SCIPP-Santa Cruz), in which a new method to enhance the sensor hardness to beam-loss damage is studied. The key feature of the method is implementation low-resistance implants. The fabrication has been combined...
Igor Mandic
(Jozef Stefan Institute (SI))
04/06/2013, 17:00
In this contribution, TCT measurements with p-type strip detectors in which one edge was cut with Scribe Cleave Passivate (SCP) technique will be presented. CCE measurements were made with focused infrared laser beam. The beam was scanned across the detector surface near the SCP edge. Measurements were performed also with focused red laser beam. The red laser light was directed to the cleaved...
Giulio Pellegrini
(Universidad de Valencia (ES))
04/06/2013, 17:20
