Speaker
Ivan Peric
(Ruprecht-Karls-Universitaet Heidelberg (DE))
Description
HV-CMOS sensors are presently considered for the use in Mu3e experiment, ATLAS and CLIC. These sensors can be implemented in commercial HV-CMOS processes. HV-CMOS sensors feature fast charge collection by drift and high radiation tolerance. The sensor element is an n-well diode in a p-type substrate. This talk will give the overview of the detector- and readout architectures, such as capacitively coupled pixel detectors, segmented strips or 3D-integrated HV-CMOS sensors. The detector improvements such as the use of substrates with higher resistivity (HV/HR-CMOS sensors) or additional implants will be discussed as well.
Primary author
Ivan Peric
(Ruprecht-Karls-Universitaet Heidelberg (DE))
