Speaker
Toru Tsuboyama
(KEK)
Description
The effort to develop a monolithic pixel sensor based on the SOI (silicon
on insulator) CMOS technology is presented. In SOI, MOS transistors are
produced on silicon oxide layer (BOX) above a silicon substrate. A monolithic
pixel detector is realized if we adopt a high-resistivity silicon and p-type and
n-type implantations can be made in the substrate. The charge induced in the
substrate by photons or charged particles is processed by the CMOS circuit
above the BOX. In 2005, an R&D has started based on fully-depleted SOI of
OKI Electric Industry Co. Ltd. and several types of TEG were fabricated and
tested. We present the basic characteristics of the SOI technology, properties of
the high-resistivity substrate and its functionality, and, test results of TEGs
including a 32x32 matrix pixel detector, which successfully detected small
signals for laser light and a β source. Finally, we cover the prospect of 2007
R&Ds.
Primary author
Toru Tsuboyama
(KEK)
