Dr Ulrich Wahl (Instituto Tecnologico e Nuclear ITN)
2/7/06, 4:25 PM
Solid state physics at ISOLDE aims at the study of the structural, electrical, optical, magnetic and transport properties related to impurities in a variety of technologically and fundamentally relevant materials, including semiconductors, metals, high-Tc superconductors and ceramic oxides. This talk will give an overview on the recent ISOLDE activities in this field, including -...
Vitor Amaral (Universidade de Aveiro, Portugal)
2/7/06, 4:55 PM
The Pr1-xCaxMnO3 displays a variety of phase transitions associated with the spin, lattice, charge and orbital degrees of freedom ,. PrMnO3 and CaMnO3 are antifeerromagnetic, and low doped (x<0.32) samples are ferromagnetic below Tc~130K. For 0.32
25. Lattice location of Ag in SrTiO3 and new developments in position-sensitive detectors for Emission Channeling
A.C. Marques (Centro de Física Nuclear da Universidade de Lisboa, Portugal)
2/7/06, 5:15 PM
Strontium-titanate is a perovskite ceramic material, which is of interest, e.g., for future devices based on metal-oxide Si heterostructures such as high-k field effect transistors. The electrical, optical and magnetic properties of SrTiO3 can be modified by the incorporation of dopants. For instance, transition metal doped SrTiO3 has been considered as a candidate for a...
T. M. Mendonça (Dep. Física, Instituto Tecnológico e Nuclear E.N. 10, P - 2686-953 Sacavém)
2/7/06, 5:35 PM
We present a progress report of lattice sites and collective ordering studies of dopant oxygen atoms in HgBa2CaCu2O6.26 (Hg1212) samples with the perturbed angular correlation technique, PAC. By measuring electric field gradients (EFG) at 199mHg nuclei, information for characterizing the oxygen atoms, Oδ, which go to the Hg- planes and dope the superconducting CuO2 planes with...
Frank Wagner (Technische Physik, Universität des Saarlandes, D-66041 Saarbrücken, Germany)
2/7/06, 5:50 PM
Understanding and control of diffusion profiles of intrinsic and extrinsic defects in semiconductors is of central importance for developing electronic and optoelectronic devices. Common to all diffusion profiles in semiconductors reported so far is the monotonously decreasing depth profile if the source of the diffusing species is located at the surface of the crystal. In compound...