Feb 17 – 19, 2015
FBK, Trento
Europe/Zurich timezone

Doping profiles and radiation damage

Feb 18, 2015, 4:25 PM
20m
"Stringa" Conference Hall (FBK, Trento)

"Stringa" Conference Hall

FBK, Trento

Via Sommarive, 18 38123 Povo - Trento ITALY

Speaker

Vagelis Gkougkousis (Laboratoire de l'Accelerateur Lineaire (FR))

Description

Radiation hardness constrains imposed by the High luminosity LHC upgrade, demand detailed modelling and simulation of substrate damage in the most basic level. In that direction, several implanted samples, which have undergone the first steps of the fabrication process, are simulated and measured. Results are then transposed to a diode test production of similar characteristics, fabricated using equivalent parameters. The samples are studied before and after proton irradiation up to doses as high as 1016 neq/cm2, while a comparison of simulation and measurements pre and post irradiation is presented in an attempt to configure and calibrate a detailed model.

Primary author

Vagelis Gkougkousis (Laboratoire de l'Accelerateur Lineaire (FR))

Co-authors

Abdenour Lounis (Laboratoire de l'Accelerateur Lineaire (FR)) Clara Nellist (LAL-Orsay (FR))

Presentation materials