Conveners
TCAD Simulations
- Claudio Piemonte (FBK)
Francesco Moscatelli
(Universita e INFN, Perugia (IT))
18/02/2015, 16:05
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination center suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1-2x10^16 1 MeV equivalent neutrons).
The model is based on a past modeling scheme featuring three levels with donor removal and slightly increased introduction...
Vagelis Gkougkousis
(Laboratoire de l'Accelerateur Lineaire (FR))
18/02/2015, 16:25
Radiation hardness constrains imposed by the High luminosity LHC upgrade, demand detailed modelling and simulation of substrate damage in the most basic level. In that direction, several implanted samples, which have undergone the first steps of the fabrication process, are simulated and measured. Results are then transposed to a diode test production of similar characteristics, fabricated...
Mr
Mohamed El Amine Benkechkache
(University of Trento)
18/02/2015, 16:45
Future experiments at the European X-Ray Free Electron Laser (XFEL) will require silicon pixel sensors with demanding performance: a wide dynamic range from 1 up to 104 12-keV photons per pixel, a small pixel pitch (~100 μm), minimum dead area and a radiation tolerance of 1GGy per 3 years of operation. Therefore, the development of four-side buttable tile detectors that meet such requirements...
Lino Demaria
(Universita e INFN (IT))
18/02/2015, 17:05
The scope of RD53 is the development of pixel readout Integrated Circuits (IC) for the next
generation of pixel readout chips to be used for the ATLAS and CMS Phase 2 pixel detector
upgrades and future CLIC pixel detectors.
This does not imply that ATLAS and CMS must use the same exact pixel readout chip, as most of
the development, test and qualification effort needed is independent...
