Feb 17 – 19, 2015
FBK, Trento
Europe/Zurich timezone

Design of planar p-on-n pixel sensor with an optimized active-edge region for the next generation of FELs

Feb 18, 2015, 4:45 PM
"Stringa" Conference Hall (FBK, Trento)

"Stringa" Conference Hall

FBK, Trento

Via Sommarive, 18 38123 Povo - Trento ITALY


Mr Mohamed El Amine Benkechkache (University of Trento)


Future experiments at the European X-Ray Free Electron Laser (XFEL) will require silicon pixel sensors with demanding performance: a wide dynamic range from 1 up to 104 12-keV photons per pixel, a small pixel pitch (~100 μm), minimum dead area and a radiation tolerance of 1GGy per 3 years of operation. Therefore, the development of four-side buttable tile detectors that meet such requirements is challenging. Through this work, carried out in the framework of the PixFEL project, design and TCAD simulations of planar p-on-n sensors with an active edge approach are performed with the aim of minimizing the dead area at the edge. The improvement of the breakdown characteristics in order to reach at least the minimum bias voltage required to avoid plasma effects at high charge concentration is achieved using different edge borders or layouts with the incorporation of multiple guard rings at the edge. The methodology of the sensor design, the optimization of the most relevant parameters, and the optimized layout are described. Finally, the simulated performance, in particular the breakdown voltage and the charge collection properties are presented.

Primary author

Mr Mohamed El Amine Benkechkache (University of Trento)

Presentation materials