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10th Anniversary "Trento" Workshop on Advanced Silicon Radiation Detectors

17–19 Feb 2015
FBK, Trento
Europe/Zurich timezone

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Session

HV CMOS 1

17 Feb 2015, 14:20
"Stringa" Conference Hall (FBK, Trento)

"Stringa" Conference Hall

FBK, Trento

Via Sommarive, 18 38123 Povo - Trento ITALY

Conveners

HV CMOS 1

  • Nanni Darbo (Universita e INFN (IT))

Presentation materials

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  1. 25. HVCMOS Sensors for LHC Upgrade
    Ivan Peric (Ruprecht-Karls-Universitaet Heidelberg (DE))
    17/02/2015, 14:20
    High-Voltage CMOS sensors are based on depleted active diodes as sensor elements. Every sensor element – pixel – is equipped with the readout electronics that performs various tasks, from signal amplification, zero suppression, address generation to time walk correction. High-Voltage CMOS sensors are an option for pixel- and strip layers of ATLAS high-luminosity upgrade. Several prototypes...
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  2. 24. Studies and status of CMOS-based sensors research and development for ATLAS strip detector upgrade
    Dr Zhijun Liang (University of California,Santa Cruz (US))
    17/02/2015, 14:40
    The talk will give an overview of the studies and status of CMOS-based sensors research and development for ATLAS strip detector upgrade. CMOS sensor can provide higher granularity, costs less in sensor fabrication compared to conventional planar sensor. Furthermore, CMOS-based sensors collect charge from thin depleted region, and it has potential to be thinned down to 50um for...
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  3. 46. TCAD Simulation of HVCMOS sensors
    Mathieu Benoit (UNIGE)
    17/02/2015, 15:00
    We present a TCAD simulation study of the properties of HVCMOS sensors as a function of substrate resistivity, pixel topology and biasing scheme. The effect of these parameters on the timing and detection efficiency will be discussed.
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  4. 47. Laboratory characterization of CCPDv2 and CCPDv4 capacitively coupled to FEI4
    Misael Caloz (Universite de Geneve (CH))
    17/02/2015, 15:20
    We present a detailed characterization of the CCPDv2 and CCPDv4 CMOS sensors capacitively coupled to FEI4. We discuss the equalization procedure and the strategy for lowering the CCPD threshold, its temperature dependence and the intrinsic limits of the system.
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  5. 48. SPS Test Beam characterization results with CCPDv2 and CCPDv4 capacitively coupled to FEI4
    Javier Bilbao De Mendizabal (Universite de Geneve (CH))
    17/02/2015, 15:40
    We present the results of the characterization of CCPDV2 and CCPDv4 sensors, before and after irradiation, at the SPS using the FEI4 Telescope. The effects of bias, threshold and irradiation on the efficiency and timing properties of the CCPD family of sensors will be discussed.
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