Feb 15 – 19, 2016
Vienna University of Technology
Europe/Vienna timezone

Breakdown voltage and triggering probability of SiPM from IV curves

Not scheduled
Vienna University of Technology

Vienna University of Technology

Gusshausstraße 27-29, 1040 Wien
Board: 100
Poster SiPM


Andrii Nagai (The Laboratory of the Linear Accelerator (LAL))


This work presents a model describing the IV characteristics of SiPM detectors allowing to easily determine important physics parameters like breakdown voltage $V_{BD}$ and triggering probability $P_{Geiger}$. The proposed model provides a good description of experimental data taken with SiPM at different temperatures ($-35^0C$ to $+35^0C$) over a very wide range of currents, from $10^{-11}$A up to $10^{-4}$A. The model allows determination of the SiPM characteristics, $V_{BD}$ and $P_{Geiger}$, which are found to be in good agreement with those determined from AC measurements. If the SiPM $\mu cell$ capacitance is known (from CV or AC measurements) the model can be used to determine a detector thermal rate.

Primary authors

Adam Para (Fermilab) Andrii Nagai (The Laboratory of the Linear Accelerator (LAL)) nicoleta dinu

Presentation materials

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