Feb 15 – 19, 2016
Vienna University of Technology
Europe/Vienna timezone

Study of the breakdown voltage of SiPMs

Feb 16, 2016, 5:45 PM
Vienna University of Technology

Vienna University of Technology

Gusshausstraße 27-29, 1040 Wien
Talk Semiconductor Detectors SiPM


Prof. Robert Klanner (University of Hamburg)


The breakdown behaviour of prototype SiPMs (Silicon Photomultiplier) with pixel sizes of 15×15, 25×25 and 50×50 μm^2 manufactured by KETEK has been investigated. The I-V (current-voltage) characteristics and the PA (pulse-area) spectra have been measured as a function of bias voltage in dark conditions, as well as with the SiPM illuminated with an LED with a wavelength of 470 nm. The measurements were made in the temperature range between –20 °C and +20 °C. From the PA spectra the gain, G(V), and from a linear fit to G(V), the gain-breakdown voltage, V_bd^G, have been obtained. From fits to the I-V curves with and without LED illumination below and above breakdown, the current-breakdown voltage, V_bd^I, has been determined. It is found that there is a significant difference between V_bd^G and V_bd^I. The difference V_bd^I-V_bd^G is positive and increases with decreasing pixel size. We explain this difference by the difference between the turn-on and the turn-off voltage of the Geiger discharge. A possible model of the V_bd^I-V_bd^G difference is presented.

Primary author

Prof. Robert Klanner (University of Hamburg)


Prof. Erika Garutti (University of Hamburg) Dr Joern Schwandt (University of Hamburg) Mr Michael Nitschke (University of Hamburg) Dr Valery Chmill (University of Hamburg)

Presentation materials