Indico has been updated to v3.3. See our blog post for details on this release. (OTG0146394)

Feb 15 – 19, 2016
Vienna University of Technology
Europe/Vienna timezone

Performance of the latest prototypes of NUV-HD Silicon Photomultipliers

Feb 16, 2016, 4:55 PM
Vienna University of Technology

Vienna University of Technology

Gusshausstraße 27-29, 1040 Wien
Talk Semiconductor Detectors SiPM


Gaetano Zappalà (University of Trento)


In this work, we will present the latest Silicon photomultiplier technology (SiPM), developed in Fondazione Bruno Kessler, designed to detect UV and blue light and named NUV-HD. With respect to the original NUV technology, shown at last VCI, the High-Density (HD) one has the same electrical field profile but a novel layout with a lower dead border area and the introduction of trenches between cells. This new layout allows having a lower cell pitch, ranging from 15 to 40 µm, reducing the gain of the cell and the correlated noise probabilities, increasing the dynamic range and the fill factor, from 55% to 80% in bigger cells. Considering the PDE, the new technology shows a peak centered in 400-420 nm as its predecessor, but reaches an impressive value of about 60% for the 40 µm cell. This technology reaches the highest PDE value compared to state-of-the-art commercial SiPMs. We will show a complete characterization focusing on the most relevant parameters of a SiPM (PDE, DCR, Correlated Noise probabilities, etc.) and comparing these values to the non-HD technology.

Primary author

Gaetano Zappalà (University of Trento)


Dr Alberto Gola (FBK) Alessandro Ferri (FBK) Claudio Piemonte (FBK) Dr Fabio Acerbi (Fondazione Bruno Kessler) Dr Giovanni Paternoster (Fondazione Bruno Kessler) Nicola Zorzi (Fondazione Bruno Kessler - FBK) Veronica Regazzoni

Presentation materials