Feb 15 – 19, 2016
Vienna University of Technology
Europe/Vienna timezone

Surface effects in segmented silicon sensors

Feb 16, 2016, 2:50 PM
20m
EI7 (Vienna University of Technology)

EI7

Vienna University of Technology

Talk Semiconductor Detectors Semiconductor Detectors

Speaker

Dr Joern Schwandt (University of Hamburg)

Description

The voltage stability, the charge-collection properties and the dark current of segmented silicon sensors are influenced by the charge and potential distributions on the sensor surface, the charge distribution in the oxide and passivation layers, and by Si-SiO$_2$ interface states. To better understand these complex phenomena, measure¬ments on test structures and sensors, as well as TCAD simulations including surface and interface effects are being performed at the Hamburg Detector Lab. The main results of these studies are presented and some tentative conclusions, which are relevant for the sensor design, are drawn.

Primary author

Dr Joern Schwandt (University of Hamburg)

Co-authors

Dr Eckhart Fretwurst (University of Hamburg) Prof. Erika Garutti (University of Hamburg) Mr Ioannis Kopsalis (University of Hamburg) Prof. Robert Klanner (University of Hamburg)

Presentation materials