Speaker
Dr
Joern Schwandt
(University of Hamburg)
Description
The voltage stability, the charge-collection properties and the dark current of segmented silicon sensors are influenced by the charge and potential distributions on the sensor surface, the charge distribution in the oxide and passivation layers, and by Si-SiO$_2$ interface states. To better understand these complex phenomena, measure¬ments on test structures and sensors, as well as TCAD simulations including surface and interface effects are being performed at the Hamburg Detector Lab. The main results of these studies are presented and some tentative conclusions, which are relevant for the sensor design, are drawn.
Primary author
Dr
Joern Schwandt
(University of Hamburg)
Co-authors
Dr
Eckhart Fretwurst
(University of Hamburg)
Prof.
Erika Garutti
(University of Hamburg)
Mr
Ioannis Kopsalis
(University of Hamburg)
Prof.
Robert Klanner
(University of Hamburg)
