VCI2016 - The 14th Vienna Conference on Instrumentation

Application of a Transient-Current-Technique based on a Two-Photon-Absorption process to the characterization HV-CMOS, LGAD and irradiated PIN sensors

Not scheduled

15m

Vienna University of Technology

Board: 60

Poster Semiconductor Detectors

Speaker

Marcos Fernandez Garcia (Universidad de Cantabria (ES))

Description

Transient Current Techniques (TCT) based on laser-induced photo-currents produced by Single Photon Absorption (SPA) processes have been extensively used during the last two decades as a powerful tool to study many of the properties relevant to operation of semiconductor detectors. Very recently, an innovative Transient Current Technique was introduced where the free charge carriers are created in a Two-Photon-Absorption (TPA) process induced by a focused femto-second laser pulse with a wavelength of 1300nm. The fact that in a TPA process the absorption of the light depends on the square of the intensity of the light beam used for the current generation allows a localized TPA-induced electron-hole pair creation in a micrometric scale voxel centered on the laser waist. As a consequence, this new technique opens the possibility to carry out a 3D mapping of the sensor’s space-charge properties with micrometric resolution. Due to its intrinsic spatial resolution, the TPA-TCT technique should be a very appropriate choice for the characterization of the alterations of the sensor’s active (charge collecting) volume induced by radiation damage and especially for the case of partially depleted sensors as it is the case of the carrier collecting n-well implemented in HV-CMOS sensors. Likewise, the study of Low Gain Avalanche Detector (LGAD) is suited for the use of the TPA-TCT technique.

Presentation materials

MarcosFernandez_VCI2016_v3.pdf