Feb 15 – 19, 2016
Vienna University of Technology
Europe/Vienna timezone

Si-PIN radiation detectors with low leakage current, thin incident window and large active area for Nuclear Physics applications.

Not scheduled
Vienna University of Technology

Vienna University of Technology

Gusshausstraße 27-29, 1040 Wien
Board: 50
Poster Semiconductor Detectors


Dr Daniela Bassignana (D+T Microelectronica, IMB-CNM (CSIC))


Silicon PIN-type radiation detectors with high resistive substrate were simulated, designed and fabricated for nuclear physics applications. The main design considerations of the Si PIN-type radiation detector were a low leakage current and thin incident window of the p+ and n+ layers. Two technologies have been used to fabricate thin and thick substrates (from 200 µm to 1mm). The first technology incorporates one extracting ring and a floating guard ring around the active area of the detector in order to obtain leakage current density values of the order of 2 nA/cm2·100µm at full depletion and at room temperature for devices with an active area with hexagonal shape and large about 9 cm2 . In the second technology three floating guard electrodes and an edge protection structure were incorporated to increase the breakdown voltage (>1000V) and to minimize the leakage current density to values lower than 2 nA/cm2·100µm for devices with active area of the order of 4 cm2. Shallow p+ and n+ layers and thin metal/passivation layers were also incorporated to minimize particles/ions energy loss. The doping profile of the p+ and n+ layers were measured by means of SIMS technique and the detectors have been electrically characterized. Experimental results will be presented and discussed.

Primary author

Dr Daniela Bassignana (D+T Microelectronica, IMB-CNM (CSIC))


Dr David Quirion (Centro Nacional de Microelectrónica IMB-CNM (CSIC)) Dr Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)) Manuel Lozano Fantoba (Centro Nacional de Microelectrónica IMB-CNM (CSIC))

Presentation materials