Feb 15 – 19, 2016
Vienna University of Technology
Europe/Vienna timezone

A micropixel avalanche phototransistor for time of flight measurements

Not scheduled
15m
Vienna University of Technology

Vienna University of Technology

Gusshausstraße 27-29, 1040 Wien
Board: 75
Poster Electronics

Speakers

Mr Azar Sadigov (National Nuclear Research Centre of MCHT) Farid Ahmadov (Institute of Radiation problems)

Description

This paper presents the results of a study of the new micropixel avalanche phototransistor (MAPT) on the basis of silicon. MAPT is a modification of well-known silicon photomultipliers (SiPMs) and differs from them in that each photosensitive pixel MAPT operating in Geiger mode further comprises an individual transistor operating in binary mode. This provides high amplitude of single photoelectron signal with significantly shorter duration. The obtained results are compared with the parameters known SiPMs.

Primary author

Mr Azar Sadigov (National Nuclear Research Centre of MCHT)

Co-authors

Prof. Adil Garibov (National Nuclear Research Centre of MCHT) Dr Faouzi Zerrouk (Zecotek Photonics Pte, Ltd) Farid Ahmadov (Institute of Radiation problems) Gadir Ahmadov Prof. Oktay Samedov (Institute of Radiation Problems of ANAS) Prof. Rahim Madatov (Institute of Radiation Problems of ANAS) Mr Samir Suleymanov (National Nuclear Research Centre of MCHT)

Presentation materials