Speakers
Mr
Azar Sadigov
(National Nuclear Research Centre of MCHT)
Farid Ahmadov
(Institute of Radiation problems)
Description
This paper presents the results of a study of the new micropixel avalanche phototransistor (MAPT) on the basis of silicon. MAPT is a modification of well-known silicon photomultipliers (SiPMs) and differs from them in that each photosensitive pixel MAPT operating in Geiger mode further comprises an individual transistor operating in binary mode. This provides high amplitude of single photoelectron signal with significantly shorter duration. The obtained results are compared with the parameters known SiPMs.
Primary author
Mr
Azar Sadigov
(National Nuclear Research Centre of MCHT)
Co-authors
Prof.
Adil Garibov
(National Nuclear Research Centre of MCHT)
Dr
Faouzi Zerrouk
(Zecotek Photonics Pte, Ltd)
Farid Ahmadov
(Institute of Radiation problems)
Gadir Ahmadov
Prof.
Oktay Samedov
(Institute of Radiation Problems of ANAS)
Prof.
Rahim Madatov
(Institute of Radiation Problems of ANAS)
Mr
Samir Suleymanov
(National Nuclear Research Centre of MCHT)
