27 June 2016 to 1 July 2016
UC Berkeley
US/Pacific timezone

Status of the radiation hardness of CMOS Monolithic Active Pixels Sensors for the CBM experiment

30 Jun 2016, 11:20
20m
203 (Clark Kerr Campus)

203

Clark Kerr Campus

Contributed Talk Upgrades

Speaker

Benjamin Linnik (Goethe University)

Description

The Compressed Baryonic Matter Experiment (CBM) is one of the core experiments of the future FAIR facility. It will explore the phase diagram of strongly interacting matter in the regime of high net baryon densities with numerous probes, among them open charm. Therefore, a dedicated vertex detector is required which will be equipped with CMOS Monolithic Active Pixels Sensors (MAPS). A joined research activity of the Goethe University Frankfurt and the IPHC Strasbourg explores strategies to match the radiation hardness of these sensors with the requirements. In the past, it could be shown that combining an improved high resistivity ($1-8~\rm k\Omega cm$) sensitive medium with the features of a 0.18$~\rm \mu m$ CMOS process can improve the radiation hardness of the sensors. In 2015, it was tried to further improve the radiation hardness by applying a external depletion voltage. Two prototype sensors were studied. Furthermore, the first full-integrated 0.18$~\rm \mu m$ CMOS-sensor FSBB was tested in beam and laboratory. We will show first results from irradiated samples at low operation temperatures.
On behalf of collaboration: CBM

Primary author

Benjamin Linnik (Goethe University)

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