Speaker
Dr
Ehrenfried Seebacher
(Austriamicrosystems)
Description
We discuss state of the art and new developments for the characterization of CMOS
technologies.
In the first chapter the most important issues of MOS transistor modeling will be
shown. Topics like AC/DC modeling, noise modeling and temperature modeling for the
MOS transistor will be explained. State of the art MOS transistor models like the
BSIM3 and BSIM4 models as well as the newest surface potential and charge based
models will be highlighted.
This article touch on a few of the issues that are important for RF design. However
the bottom line is the existence of high accurate S-Parameter measurements and
frequency dependent SPICE models not only for the active devices like MOS
transistor and varractors, also for passive devices like resistors, inductors and
capacitors.
CMOS technologies include also additional parasitic devices like PNP bipolar
transistors, which should be modeled very carefully for different analog
applications like band-gap reverence circuits. And last but not least the very
important topic statistical modeling including worst case corner modeling, Monte
Carlo simulation, statistical boundary modeling and mismatch parameter will be
discussed.
Author
Dr
Ehrenfried Seebacher
(Austriamicrosystems)
