Radiation Damage in Silicon Particle Detectors - Microscopic Defects and Macroscopic Properties -

by Michael Moll (CERN EP-TA1-SD)

Friday 14 Sept 2001, 11:00 → 12:00 Europe/Zurich

13/2-005 (CERN)

Silicon microstrip and pixel detectors for tracking purposes in the LHC experiments will have to operate in extremely intense hadronic radiation fields where radiation damage of the detector bulk material leads to severe deterioration of the detector properties (charge collection efficiency, depletion voltage, leakage current). Defect engineering strategies were followed in the framework of the RD48 (ROSE) project in order to improve the radiation tolerance of silicon, which finally succeeded in the development of Diffusion Oxygenated Float Zone Silicon (DOFZ). This material was proved to be radiation harder and will be employed in the tracking detectors exposed to the highest radiation levels. The presentation will cover microscopic and macroscopic damage effects in standard and oxygen enriched silicon. Furthermore, open questions regarding the DOFZ and models explaining the improved radiation hardness on the microscopic level will be discussed.

Organiser(s): Ariella Cattai / EP Division

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