OTHER SEMINARS - RD49 SEMINAR:<br>Study of Radiation effects in microelectronic devices at Vanderbilt University

by Ken Galloway (Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, TN 37235)

Friday 20 Oct 2000, 14:00 → 14:15 Europe/Zurich

503/1-001 - Council Chamber (CERN)

Radiation Effects Research at Vanderbilt University Vanderbilt University in Nashville, Tennessee has the largest and most active radiation-effects research program at any U.S. university. The research topics include hardness-assurance methods for CMOS and bipolar integrated circuits, single-event transients, low-dose-rate effects in bipolar transistors, single-event effects in logic and power devices, basic physics of radiation-induced defects, and development of TCAD tools for radiation effects. This talk will contain an overview of the facilities and research projects related to radiation effects at Vanderbilt.