OTHER SEMINARS - RD49 SEMINAR:<br>Study of Radiation effects in microelectronic devices at Vanderbilt University

by Ron Schrimpf (Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, TN 37235)

Friday 20 Oct 2000, 11:00 → 14:00 Europe/Zurich

13-2-006 (CERN)

Modelling and Simulating Radiation Effects in Microelectronics When electronic devices are used in space and military systems, they may be exposed to various types of radiation, including photons, electrons, protons, neutrons, and heavy ions. The effects of radiation on the semiconductor devices within the systems range from gradual degradation to catastrophic failure. In order to design and produce reliable systems, it is necessary to understand the device-level effects of radiation and develop appropriate strategies for reducing system susceptibility. Since radiation effects were identified as a serious area of concern in the 1960s, significant progress has been made in producing radiation-hardened parts and developing reliable test methods. However, as semiconductor technology becomes more advanced, it becomes increasingly important to have physically based simulation tools for analysing radiation effects and designing radiation-tolerant devices. This talk will focus on the use of modelling and simulation in predicting total-ionising-dose effects in semiconductor devices.