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LCWS 2004

19–23 Apr 2004
Le Carré des Sciences, Paris- France
Europe/Zurich timezone

Session

Tracking and Vertexing: Silicon R&D II

21 Apr 2004, 09:30
Le Carré des Sciences, Paris- France

Le Carré des Sciences, Paris- France

Description

Conveners:M.Winter, HB. Park, D.Karlen, B.Schumm

Presentation materials

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  1. 66. Status of the SOI monolithic active pixel detector development
    Halina Niemiec
    21/04/2004, 09:30
    The monolithic active pixel detector realized in the Silicon on Insulator technology (SOI) is a novel solution of ionising radiation detectors, which allows integration of the particle detector and readout electronics in one entity by the utilization of the both silicon layers (support and device layers) of a wafer-bonded SOI substrate. First test structures of the SOI detectors have been...
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  2. 64. The Integrated Pixel Tracker
    Miran Djordjevic
    21/04/2004, 09:45
    We propose the Integrated Pixel Tracker (IPT), a device that is part of the vertex detector based on the MIMOSA CMOS pixel sensor. The IPT takes raw data from the pixel sensors, and applies real-time data reduction in two steps by means of hardware: cluster collection on a local level and track reconstruction on a global level. Only the track features are stored on disk. We also discuss our...
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  3. 65. Processing of Ultra Thin Silicon Sensors for Future e+e- Linear Collider Experiments
    Ladislav Andricek
    21/04/2004, 09:55
    A new generation of DEPFET active pixel sensors with 25 um pixel size is currently being developed to meet the requirements in the point measurement resolution and multiple track separation. To minimize the influence of the multiple scattering on the impact parameter resolution, the sensors have to be made as thin as possible. We will present a technology based on direct wafer bonding and deep...
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  4. 68. Report of silicon R&D activities in Korea
    Jik Lee
    21/04/2004, 10:10
    We will report on the silicon R&D activities in Korea for the future Linear Collider. The activities includes design, production and simulation of double-side silicon strip sensors. The charateristics of our first prototype sensors and the results of simulation will be presented.
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  5. 69. Irradiation tests of GaAs:Cr detectors in Protvino and prospects for LC tracking
    Yuri Arestov
    21/04/2004, 10:25
    Expected properties of a resistive structure of gallium arsenide doped by Chromium, GaAs:Cr, are discussed. Pad GaAs:Cr detectors of the size 10mm*10mm are presented as an output of new technologies developed in Tomsk. Results of the recent tests of radiation hardness of these detectors in hadron and gamma beams are reported. Further plans for direct comparison of GaAs:Cr detectors and Si...
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  6. 67. R&D Towards a Short-Shaping Time Silicon Tracker at Santa Cruz
    Bruce Schumm
    21/04/2004, 10:35
    We present the progress of the hardware program on short-shaping time microstrip readout at UC Santa Cruz.
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  7. 70. Latest Progresses on the R&D on Silicon Tracking for the LC
    Aurore Savoy-Navarro
    21/04/2004, 10:50
    Latest results, within the SiLC R&D program, on the measurements achieved with a long ladder prototype with microstrips of length up to 2m24, on the design and simulation studies of a complete FE and readout electronics chain, on the CAD mechanical design of such a tracking system and related integration issues, on the thermo-mechanical studies are presented as well as the near future prospects.
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