LCWS 2004

Session

Tracking and vertexing: Silicon R&D I

20 Apr 2004, 13:30

Le Carré des Sciences, Paris- France

Description

Conveners:M.Winter, HB. Park, D.Karlen, B.Schumm

16. Status of CCD-based vertex detector R&D for a linear collider

Aso, T. (Toyama National College)

20/04/2004, 13:30

Studies of CCD-based vertex detector for a linear collider are presented. In 2003 physical year, our work was focused on the aspects of radiation tolerance for the high energy electrons and charge diffusion time for faster readout operation. This talk gives an overviwe of our current results and future plans.

17. LCFI Collaboration Status Report

Joel Goldstein

20/04/2004, 13:45

The LCFI collaboration is conducting a comprehensive research and development programme towards a silicon pixel-based vertex detector for the future LC. The latest results in the development and prototyping of column parallel CCDs, their associated readout electronics and ultra-low mass ladders will be discussed, along with future plans.

18. Status Report on the MAPS Detectors for the Warm and the Superconductor Options of the FLC

Grzegorz Deptuch

20/04/2004, 14:00

Very high granularity, very modest material budget, fast read-out and radiation hard sensors are required for construction of the Vertex Detector, providing the measurement precision asked by the physics programme at the Future e+e- Linear Collider (FLC). Various versions of MAPS detectors, searching for optimum operation under given experimental conditions, are being developed within the...

19. Status and first results of the UK active pixel collaboration

Jaap Velthuis

20/04/2004, 14:20

We are developing CMOS monolithic active pixel sensors for the vertex detector for the future Linear Collider. We have produced two working test structures designed in 0.25 CMOS which feature four different types of pixels: standard 3MOS, 4MOS allowing correlated double sampling, charge amplifier pixels and a Flexible APS. The FAPS has a 10 deep pipeline on each pixel specifically designed for...

20. Design and Technology of DEPFET Active Pixel Sensors for Future e+e- Linear Collider Experiments

Gerhard Lutz

20/04/2004, 14:35

A new generation of DEPFET (DEPleted Field Effect Transistor) active pixel sensors with 25 micrometer pixel size has been developed and produced to meet the requirements of the future e+e- linear collider physics program in point measurement resolution and multiple track separation. A silicon technology is presented which allows the production of large sensor arrays consisting of linear DEPFET...