6th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders

Contribution List

3. Welcome

Mara Bruzzi, Jaakko Haerkoenen and Michael Moll

02/06/2005, 09:00

Plenary session -Silicon technology for detectors

1. Manufacture of High Resistivity, Low Oxygen Czochralski Silicon

Olli Anttila (Okmetic Oyj)

02/06/2005, 09:15

Plenary session -Silicon technology for detectors

2. Quantitative copper and iron measurement in silicon using contactless recombination lifetime measurements

Hele Savin (Helsinki University of Technology)

02/06/2005, 09:40

Plenary session -Silicon technology for detectors

4. Admittance spectroscopy study of point defects and nano-clusters in irradiated high-purity silicon

Klaus Johansen (University of Oslo)

02/06/2005, 10:00

Defect and Material Characterization

5. X defect after Co-60 gamma irradiation

Frank Hönniger (University of Hamburg)

02/06/2005, 10:20

Defect and Material Characterization

6. Photoinduced transient spectroscopy of epitaxial silicon irradiated with high proton fluences

Pawel Kaminski (Institute of Electronic Materials Technology)

02/06/2005, 10:40

Defect and Material Characterization

7. Irradiation damage in sublimation grown 6H-SiC

Mads Mikelsen (University of Oslo)

02/06/2005, 11:00

Defect and Material Characterization

8. Shallow donors in MCz-Si n- and p-type Detectors at different process temperature, irradiation and thermal treatments

David Menichelli (University of Florence, INFN Florence)

02/06/2005, 11:00

Defect Engineering

9. Numerical simulation of radiation damage effects in p-type silicon detectors

Marco Petasecca (University of Perugia - DIEI)

02/06/2005, 11:20

Defect Engineering

10. Detector Recovery/Improvement Via Elevated-temperature-annealing (DRIVE) - A New Approach for Si Detector Applications in High Radiation Environment in SLHC

Elena Verbitskaya (Ioffe Physico-Technical Institute RAS)

02/06/2005, 11:40

Defect Engineering

11. Radiation tolerant epitaxial silicon detectors of different thickness

Eckhart Fretwurst (Univeristy of Hamburg)

02/06/2005, 13:50

Pad Detector Characterization

12. Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope

Kari Leinonen (Lappeenranta University of Technology)

02/06/2005, 14:10

Pad Detector Characterization

13. Irradiation results of MCZ, thinned and epitaxial detectors

Andrea Candelori (INFN Padova)

02/06/2005, 14:30

Pad Detector Characterization

14. Characterization of n and p-type diodes processed on Fz and MCz silicon after irradiation with protons of 24GeV/c and 26 MeV/c and with reactor neutrons

Norman Manna (INFN Bari)

02/06/2005, 14:50

Pad Detector Characterization

15. Minimum ionizing particle detector based on p+n junction SiC diode

Francesco Moscatelli (DIEI and INFN Perugia and CNR-IMM Bologna)

02/06/2005, 16:00

New Materials

16. Properties of 12 micron thick epitaxial GaN irradiated up to 1e16 cm2 by 24 GeV protons

Juozas Vaitkus (Vilnius University)

02/06/2005, 16:20

New Materials

17. I-V & CCE Characterisation of Proton Irradiated 12 Micron Epitaxial GaN Detectors

James Grant (University of Glasgow)

02/06/2005, 16:40

New Materials

18. COMPARISON OF SHALLOW DONOR FORMARION AND RADIATION DEFECT ELIMINATION IN HYDROGENATED PARTICLE DETECTORS MADE OF STANDARD AND DIFFUSION OXYGENATED SILICON

Leonid Makarenko ((Belarusian State University)

02/06/2005, 17:00

New Materials

19. EVALUATION OF OXYGEN AND CARBON CONTENT IN STANDARD FLOAT ZONE SILICON DETECTORS

Leonid Makarenko ((Belarusian State University))

02/06/2005, 17:20

New Materials

20. Neutron-induced activity studies of the ATLAS SCT strip detector module, glues and paint

Vladimir Linhart (Czech Technical University in Prague)

03/06/2005, 09:00

Full Detector Systems

23. Updated double junction simulation of CMS pixel test beam data

Morris Swartz (Johns Hopkins University)

03/06/2005, 09:20

Full Detector Systems

24. Test Beam Results of Proton Irradiated Czochralski Silicon Strip Detector

Panja Luukka (Helsinki Institute of Physics)

03/06/2005, 09:40

Full Detector Systems

25. Radiation Testing of bipolar SiGe transistors

Hartmut F.-W. Sadrozinski (SCIPP, UC Santa Cruz)

03/06/2005, 10:00

Full Detector Systems

26. Update of annealing measurements on heavily irradiated p-type sensors

Gianluigi Casse (University of Liverpool)

03/06/2005, 10:20

Full Detector Systems

27. Laser Tests of Silicon Strip Sensors

Peter Kodys (Charles University, Prague)

03/06/2005, 10:40

Full Detector Systems

28. P-spray implant optimization for P-type microstrip detectors.

Celeste Fleta (CNM Barcelona)

03/06/2005, 10:55

Full Detector Systems

29. 2D simulation of n-on-p strip detectors with different p-stop and p-spray structures

Tanja Palviainen (Lappeenranta University of Technology)

03/06/2005, 11:15

Full Detector Systems

30. Irradiation of Fz and MCz mini-sensors of n and p-type with 24 GeV/c and 26 MeV/c protons up to fluences of 3.0E+15 1MeV n/cm2. Irradiation of Fz and MCz mini-sensors of n and p-type with 24 GeV/c an

Alberto Messineo (Pisa University)

03/06/2005, 11:35

Full Detector Systems

21. Prospects and Benefits of Freiburg joining RD50

Ulrich Parzefall

03/06/2005, 11:55

Full Detector Systems

22. Radiation Effects Facility (RADEF) at Jyväskylä

Ari Virtanen (University of Jyväskylä)

03/06/2005, 12:15

Full Detector Systems

31. New Single-sided 2d and (2+3)d Stripixel Detectors: Concept, Simualtion, and Design

Zheng Li

04/06/2005, 10:30

New Structures

33. Annealing studies on Sintef sensors

daniela bortoletto (purdue)

04/06/2005, 10:50

New Structures

32. Measurement of MCz sensors

daniela bortoletto (purdue)

04/06/2005, 10:50

New Structures

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