09:00
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Plenary session -Silicon technology for detectors
(until 10:00)
(0--E204)
|
09:00
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Welcome
-
Mara Bruzzi, Jaakko Haerkoenen and Michael Moll
(0--E204)
|
09:15
|
Manufacture of High Resistivity, Low Oxygen Czochralski Silicon
-
Olli Anttila
(Okmetic Oyj)
(0--E204)
|
09:40
|
Quantitative copper and iron measurement in silicon using contactless recombination lifetime measurements
-
Hele Savin
(Helsinki University of Technology)
(0--E204)
|
10:00
|
Defect and Material Characterization
(until 11:20)
(0--E204)
|
10:00
|
Admittance spectroscopy study of point defects and nano-clusters in irradiated high-purity silicon
-
Klaus Johansen
(University of Oslo)
(0--E204)
|
10:20
|
X defect after Co-60 gamma irradiation
-
Frank Hönniger
(University of Hamburg)
(0--E204)
|
10:40
|
Photoinduced transient spectroscopy of epitaxial silicon irradiated with high proton fluences
-
Pawel Kaminski
(Institute of Electronic Materials Technology)
(0--E204)
|
11:00
|
Irradiation damage in sublimation grown 6H-SiC
-
Mads Mikelsen
(University of Oslo)
(0--E204)
|
11:00
|
Defect Engineering
(until 12:00)
(0--E204)
|
11:00
|
Shallow donors in MCz-Si n- and p-type Detectors at different process temperature, irradiation and thermal treatments
-
David Menichelli
(University of Florence, INFN Florence)
(0--E204)
|
11:20
|
Numerical simulation of radiation damage effects in p-type silicon detectors
-
Marco Petasecca
(University of Perugia - DIEI)
(0--E204)
|
11:40
|
Detector Recovery/Improvement Via Elevated-temperature-annealing (DRIVE) - A New Approach for Si Detector Applications in High Radiation Environment in SLHC
-
Elena Verbitskaya
(Ioffe Physico-Technical Institute RAS)
(0--E204)
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