Speaker
Pawel Kaminski
(Institute of Electronic Materials Technology)
Description
Systematic studies of defect centres in epitaxial silicon irradiated with high fluences of 24 GeV/c protons, ranging from 1.6e15 to 1.6e16 cm^-2, have been performed using High-Resolution Photoinduced Transient Spectroscopy (HRPITS). The studies were correlated with the measurements of the leakage current of the epitaxial detectors and the estimations of the electron mobility and lifetime product. The comparison of the defect structure of the oxygenated and standard n-type epitaxial layers is shown.
Author
Pawel Kaminski
(Institute of Electronic Materials Technology)
Co-authors
Eckhart Fretwurst
(Institute for Experimental Physics, Unversity of Hamburg)
Jaroslaw Zelazko
(Institute of Electronic Materials Technology)
Roman Kozlowski
(Institute of Electronic Materials Technology)
