|
09:00
|
Pad Detector Characterization and Defect Engineering
(until 11:00)
(40-S2-D01)
|
|
09:00
|
Annealing studies of mixed irradiated MICRON diodes
-
Gregor Kramberger
(Jozef Stefan Institute)
(40-S2-D01)
|
|
09:20
|
TCT measurements on MCz
-
Katharina Kaska
(CERN)
(40-S2-D01)
|
|
09:40
|
Charge collection and trapping effects in 75 μm, 100 μm and 150 μm thick n-type epitaxial silicon diodes after proton irradiation
-
Jörn Lange
(Hamburg University)
(40-S2-D01)
|
|
10:00
|
Discussion: Pad Detector Characterization and Defect Engineering
(40-S2-D01)
|
|
10:30
|
--- Coffee Break ---
|
|
11:00
|
Full Detector Systems
(until 16:00)
(40-S2-D01)
|
|
11:00
|
X-Ray irradiation on p-type micro-strip detectors with p-spray and moderated p-spray isolations
-
Michael Beimforde
(Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)
(40-S2-D01)
|
|
11:20
|
Questions about extrapolation at SLHC doses of silicon parameter measured after lower fluences
-
Gianluigi Casse
(University of Liverpool)
(40-S2-D01)
|
|
11:40
|
Measurements of CCE/IV/annealing behaviour of microstrip detectors irradiated with reactor neutrons and protons to SLHC doses
- Dr
Anthony Affolder
(University of Liverpool)
(40-S2-D01)
|
|
12:00
|
Test beam results of heavily irradiated magnetic Czochralski silicon (MCz-Si) strip detectors
-
Panja-Riina Luukka
(Helsinki Institute of Physics HIP)
(40-S2-D01)
|
|
12:20
|
--- Lunch ---
|
|
13:40
|
Status of the ALIBAVA readout system
- Mr
Ricardo Marco
(IFIC-Instituto de Física Corpuscular)
(40-S2-D01)
|
|
14:00
|
Pixel Sensor Measurements at CERN
-
Heinz Pernegger
(CERN)
(40-S2-D01)
|
|
14:20
|
Signal height in irradiated Silicon Pixel Detectors
-
Jhon Acosta
(Univ. of Puerto Rico - Mayaguez)
(40-S2-D01)
|
|
14:40
|
Production of n-in-n and n-in-p pixels on Fz and MCz silicon with CiS
-
Anna Macchiolo
(Max-Planck-Institut fur Physik)
(40-S2-D01)
|
|
15:00
|
Discussion: Full Detector Systems
(40-S2-D01)
|
|
15:30
|
--- Coffee break ---
|
