Eckhart Fretwurst
(University of Hamburg)
10/11/2008, 13:45
I. Pintilie (a), _E. Fretwurst_ (b), A. Junkes (b), G. Lindstroem (b) /(a)/ /National Institute of Materials Physics, Bucharest, Romania
(b) Institute for Experimental Physics, University of Hamburg, Germany
This work is focusing on the investigation of those radiation induced defects causing degradation effects of Silicon detector performance.
Comparative studies of the defects induced...
Prof.
Juozas Vaitkus
(Vilnius University)
10/11/2008, 14:15
The photoconductivity spectra (PC) and lifetime measurement were used for control of transforms and competition of recombination and generation centres in neutron irradiated MCZ Si. In the as-irradiated material the recombination centres prevail and cause mono-exponential decay with nearly linear decrease of carrier lifetime from several microseconds to sub-nanoseconds with enhancement of...
Alexandra Junkes
(Hamburg University)
10/11/2008, 14:35
It was previously shown*, that the bistable cluster defect levels E4a** and E4b** anneal out at the same temperature like the divacancy in neutron and proton irradiated oxygen rich material (MCz and oxygen enriched Epi). Defect concentrations were obtained by means of Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current technique (TSC). In addition oxygen lean Epi and FZ...
Pawel Kaminski
(Institute of Electronic Materials Technology)
10/11/2008, 14:55
Systematic studies of defect centres in epitaxial silicon irradiated with high fluences of 24 GeV/c protons, ranging from 1.6e15 to 1.6e16 cm^-2, have been performed using High-Resolution Photoinduced Transient Spectroscopy (HRPITS). The studies were correlated with the measurements of the leakage current of the epitaxial detectors and the estimations of the electron mobility and lifetime...
