Michael Beimforde
(Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)
11/11/2008, 11:00
Two micro-strip sensors were irradiated with X-ray irradiation facility in Karlsruhe to investigate the change of the inter-strip resistance and capacitance as a function of the recieved dose. For one of the structures a p-spray isolation was chosen, for the other one a moderated p-spray.
Gianluigi Casse
(University of Liverpool)
11/11/2008, 11:20
Discussion of VFD, trapping and reverse currrent
Dr
Anthony Affolder
(University of Liverpool)
11/11/2008, 11:40
Measurements of micro-strip sensors made with the RD50 mask sets with various silicon substrates (n-type/p-type FZ/MCz/EPI) have been compared after high doses of neutron and protons comparable to those expected at the SLHC.
Issues of charge collection, sensor power, and annealing performance will be evaluated for both standard (~300 um) and thin (140-200 um) detectors.
Panja-Riina Luukka
(Helsinki Institute of Physics HIP)
11/11/2008, 12:00
N-type MCz-Si strip detectors with an area of 16 cm^2 were irradiated to several different fluences up to 3x10^15 1 MeV neq/cm^2 with protons or with neutrons and protons depending on the detector. The beam test was carried out at CERN H2 area using a reference beam telescope and an efficient cooling system.
Mr
Ricardo Marco
(IFIC-Instituto de Física Corpuscular)
11/11/2008, 13:40
A readout system for microstrip silicon sensors has been developed as a result of a collaboration among the University of Liverpool, the CNM of Barcelona and the IFIC of Valencia. The name of this collaboration is ALIBAVA and it is integrated in the RD50 Collaboration. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels...
Jhon Acosta
(Univ. of Puerto Rico - Mayaguez)
11/11/2008, 14:20
In order to establish a fluence limit for the radiation hardness of the CMS barrel pixel detector and for conventional n-on-n sensors in general, pixel sensors of the size of one CMS pixel readout (PSI46V2.1) have been bumpbonded and irradiated with positive pions up to 6E14 Neq/cm2 and with protons up to 4E15 Neq/cm2. The sensors were taken from production wafers of the CMS barrel pixel...
Anna Macchiolo
(Max-Planck-Institut fur Physik)
11/11/2008, 14:40
We present a production of n-in-n and n-in-p planar pixel sensors on Fz and MCz silicon that we intend to perform with CiS. We aim to investigate the performances
of these detectors at SLHC fluences comparing different bulk materials and to study
the feasibility of operating planar pixel sensors with slimmed or active edges.
