Gregor Kramberger
(Jozef Stefan Institute)
11/11/2008, 09:00
A set of MICRON diodes was irradiated with different fluences of protons and pions up to 1.1e15 p/cm2 followed by additional 2e14 n/cm2. The compensation of the stable damage due to neutron and charged hadron irradiation was observed for the MCz-n samples, while for FZ detectors the damage scales with equivalent fluence. The diodes were annealed up to 10000 min at 60C in steps, during which...
Katharina Kaska
(CERN)
11/11/2008, 09:20
TCT measurements on a series of proton and neutron irradiated MCz p- and n-type detectors.
Jörn Lange
(Hamburg University)
11/11/2008, 09:40
Epitaxial silicon pad diodes of 75 μm, 100 μm and 150 μm thickness and both ST and DO n-type material have been investigated after 24 GeV/c proton irradiation (CERN PS) in an equivalent fluence range between 1e14 n/cm² and 1e16 n/cm². A new TCT setup with 670 nm laser light enabled the measurement of time-resolved electron current pulse shapes in 150 μm thick diodes. Thus the charge correction...
