13th RD50 Workshop

Session

Pad Detector Characterization and Defect Engineering

11 Nov 2008, 09:00

40-S2-D01 (CERN)

13. Annealing studies of mixed irradiated MICRON diodes

Gregor Kramberger (Jozef Stefan Institute)

11/11/2008, 09:00

A set of MICRON diodes was irradiated with different fluences of protons and pions up to 1.1e15 p/cm2 followed by additional 2e14 n/cm2. The compensation of the stable damage due to neutron and charged hadron irradiation was observed for the MCz-n samples, while for FZ detectors the damage scales with equivalent fluence. The diodes were annealed up to 10000 min at 60C in steps, during which...

19. TCT measurements on MCz

Katharina Kaska (CERN)

11/11/2008, 09:20

TCT measurements on a series of proton and neutron irradiated MCz p- and n-type detectors.

4. Charge collection and trapping effects in 75 μm, 100 μm and 150 μm thick n-type epitaxial silicon diodes after proton irradiation

Jörn Lange (Hamburg University)

11/11/2008, 09:40

Epitaxial silicon pad diodes of 75 μm, 100 μm and 150 μm thickness and both ST and DO n-type material have been investigated after 24 GeV/c proton irradiation (CERN PS) in an equivalent fluence range between 1e14 n/cm² and 1e16 n/cm². A new TCT setup with 670 nm laser light enabled the measurement of time-resolved electron current pulse shapes in 150 μm thick diodes. Thus the charge correction...

21. Discussion: Pad Detector Characterization and Defect Engineering

11/11/2008, 10:00