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Elena Verbitskaya (A.F. Ioffe Physical Technical Inst.)11/11/2008, 16:00The overview on silicon edgeless strip detectors developed for close-to-beam experiments at CERN will be presented. The recent progress of these detectors is related to the elaboration of the specific design - edgeless detectors with current terminating structure that was successfully realized in p-on-n Si edgeless detectors for the TOTEM experiment. The potential and electric field...Go to contribution page
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Dr Giulio Pellegrini (Centro Nacional de Microelectronica CNM-IMB-CSIC)11/11/2008, 16:20I will report on the fabrication of new 3D detectors and the future plan for bump bonding Atlas pixels and Medipix2 chips.Go to contribution page
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Ulrich Parzefall (Fakultaet fuer Physik)11/11/2008, 16:40A 3D stc micro strip detector was placed in a beam of 180GeV pions at CERN in 2007. The detector was connected to analogue read-out electronics as used in the tracking system of the LHCb experiment. We present the results from the analyis of the test beam data, including signal/noise ratio measurements and efficiciency studies. This work has been done in close collaboration with Trento...Go to contribution page
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Michael Koehler (Universitaet Freiburg)11/11/2008, 17:00In July 2008, a testbeam with double-sided double type column (ddtc) 3D detectors was performed at the CERN SPS. It was provided by the Helsinki group in the framework of CMS. This talk presents the testbeam setup and a detector under test, produced by FBK-irst. The current status of the analysis, which is done in collaboration with the groups from Glasgow and Helsinki, and first (preliminary)...Go to contribution page
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Vladimir Eremin (Ioffe Physical Technical Institute RAS)11/11/2008, 17:20The different constructions of silicon 3D detectors are analyzed and tabulated in terms of combinations of two simple elements: the p-n junction and the ohmic columns. In the p-n junction column two parts are recognized: a cylindrical one which radius increases with the bias, and a semi-spherical “dead” tip with a maximal electric field due to the focusing effect. This consideration allows...Go to contribution page
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11/11/2008, 17:40
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