Speaker
Emily Hirsch
(Texas Tech University)
Description
Silicon Carbide (SiC) is a leading wide bandgap semiconductor for increasing the power density of high power applications. This paper overviews the long term reliability and safe operating area of 15 kV SiC PiN diodes during pulsed current conditions. An automated system is used to stress these devices with ultra-high current pulses and monitor degradation with in-system characterization. The system is capable of a 100 $\mu$s full-width half maximum pulse width up to 15 kA, with a repetition rate of 0.5 Hz. Periodic in-system characterization measures device forward conduction and reverse breakdown. The devices in this paper are pulsed at current levels from 1.5 kA to 3 kA. Over 100,000 pulses at 1.5 kA have been performed with no degradation. The long term reliability and failure mode results for the 15 kV PiN diodes will be reviewed.
Primary author
Emily Hirsch
(Texas Tech University)
Co-authors
Dr
Aderinto Ogunniyi
(Army Research Laboratory)
Argenis Bilbao
(Texas Tech University)
Mrs
Heather O'Brien
(Army Research Laboratory)
James Schrock
(Texas Tech University)
Prof.
Michael Giesselmann
(Texas Tech University)
Mr
Shelby Lacouture
(Texas Tech University)
Stephen Bayne
(Texas Tech University)
Peer reviewing
Paper
Paper files:
