Speaker
James Schrock
(Texas Tech University)
Description
Silicon carbide Super Gate Turn-OFF (SGTO) thyristors are an advanced technology for increasing the power density of high voltage pulsed power or power electronics. However, the transient characteristics and failure modes of these devices have to be further understood. This paper presents the Silvaco Atlas simulation of a 15 kV SiC SGTO thyristor during extreme pulsed overcurrent conditions. The device is simulated with various operating conditions that include pulsed current amplitude, pulse width, and temperature, and the simulation results are validated against experimental results for a 100 $\mu$s, 2.0 kA pulse. In addition, tradeoff studies for the device structure region widths are performed. The simulation model developed in Silvaco Atlas is detailed, and the results for the various operating conditions and device region widths are presented.
Primary author
James Schrock
(Texas Tech University)
Co-authors
Dr
Aderinto Ogunniyi
(Army Research Laboratory)
Argenis Bilbao
(Texas Tech University)
Emily Hirsch
(Texas Tech University)
Ms
Heather O'Brien
(Army Research Laboratory)
Prof.
Michael Giesselmann
(Texas Tech University)
Mr
Shelby Lacouture
(Texas Tech University)
Stephen Bayne
(Texas Tech University)
Mr
William Ray
(Texas Tech University)
Peer reviewing
Paper
Paper files:
