Name: 14th RD50 Workshop
Start: 2009-06-03T13:30:00+02:00
End: 2009-06-05T16:00:00+02:00
Location: Freiburg, Germany

14th RD50 Workshop

from Wednesday 3 June 2009 (13:30) to Friday 5 June 2009 (16:00)

Monday 1 June 2009
Tuesday 2 June 2009
Wednesday 3 June 2009
13:30
13:30 - 13:50
Contributions

13:30 Welcome to the 14th RD50 Workshop - Mara Bruzzi (Dipartimento di Fisica) Michael Moll (CERN) Ulrich Parzefall (Uni Freiburg)
13:50
13:50 - 18:40
Contributions

13:50 Capacitance Measurements and Depletion Voltage for Annealed Fz and MCz Diodes - Jessica Metcalfe (Department of Physics and Astronomy-University of New Mexico-Unk)

14:10 Determination of depletion voltage from CV, IV and CCE measurements on Pad Detectors - Katharina Kaska (Technische Universitaet Wien)

14:30 Electrical Characterization of Irradiated Silicon Diodes at Different Temperature - Vladimir Khomenkov (Hamburg University)

14:50 TCT-Measurements of mixed irradiated Magentic Czochralski Diodes in the SLHC-Scenario - Robert Eber (IEKP, UNI-Karlsruhe (TH))

15:10 Charge collection and trapping effects in n-type and p-type epitaxial silicon diodes after proton irradiation - Joern Lange (Hamburg University)

16:00 Determination of strip detector properties by using Edge-TCT - Gregor Kramberger (Jozef Stefan Institute)

16:20 New TCT setups at CERN and Louvain - Manuel Fahrer (CERN)

16:40 Predictions on charge collection efficiency in heavily irradiated Si detectors basing on the approach of active base region - Elena Verbitskaya (Ioffe Physical Technical Inst.)

17:00 Contributions of Electrons and Holes to Total Collected Charge in Heavily Irradiated Si Pad and Strip/Pixel Detectors: A Comparison Simulation Study - Zheng Li (BNL)

17:20 Bias on-off proton irradiation results on MCz-Si and Fz-si detectors - Jasu Haerkoenen (Helsinki Institute of Physics HIP)

17:40 Sensor R&D for an upgrade of the CMS pixel barrel - Jennifer Ann Sibille Jennifer Ann Sibille (University of Kansas-Unknown-Unknown)

18:00 Discussion Session - Eckhart Fretwurst (Hamburg University) Gregor Kramberger (Jozef Stefan Institute)
18:40

18:40 - 19:40
Thursday 4 June 2009
08:45
08:45 - 12:35
Contributions

08:45 Electrical characteristics of ATLAS07 Series I large detectors. - Marcela Mikestikova (Elementary Particle Division-Institute of Physics-Acad. of Scien)

09:05 Irradiation program in Prague - status. - Peter Kodys (Faculty of Mathematics and Physics) Peter Kodys (Charles University)

09:25 Comparison of the CCE properties of microstrip detectors made with different substrates and irradiated with protons and neutrons at different temperature - Affolder Anthony (University of Liverpool)

09:45 Anneling of Charge Collection in Strip sensors and the Depletion Voltage - Hartmut Sadrozinski (SCIPP, UC santa Cruz)

10:05 Neutron irradiation for p-type sensors. Detector characterization with ALIBAVA system - Urmila Soldevila

10:55 The avalanche effect in operation of heavily irradiated silicon p-i-n detectors - Vladimir Eremin (Ioffe Physical Technical Institute)

11:15 Can we claim multiplication effects in irradiated silicon? - Gianluigi Casse (University of Liverpool)

11:35 Measurements of lorentzangle in highly irradiated silicon-strip-detectors - Michael Schneider (University Karlsruhe)

11:55 Performance of irradiated MCz detectors in a test beam environment - Teppo Maeenpaeae (Helsinki Institute of Physics HIP)

12:15 Commissioning the CMS pixel detector with cosmic ray data - Vincenzo Chiochia (Universitat Zurich)
12:40 Lunch Break
Lunch Break
12:40 - 14:00
14:00
14:00 - 14:45
Contributions

14:00 The Future of Silicon Solar Cells - Eicke Weber (Director of the Fraunhofer Institute for Solar Energy Systems (ISE) and a Professor of physics and applied sciences at the Albert Ludwig University of Freiburg)
14:45
14:45 - 18:00
Contributions

14:45 Prediction of the macroscopic "reverse annealing" using microscopic defect concentrations - Alexandra Junkes (Hamburg University)

15:05 Annealing induced evolution of defect centers in epitaxial silicon irradiated with high proton fluences - Pawel Kaminski (Institute of Electronic Materials Technology)

15:55 TSC studies on MCz silicon pad detectors irradiated with neutrons - Monica Scaringella (University of Florence)

16:15 Comparative study of the electric field dependent variations of carrier recombination and drift parameters in MCZ Si detectors irradiated by different fluences of neutrons - Juozas Vaitkus (Vilnius University)

16:35 Effect of microscopic defects in n-type irradiated MCz silicon detectors: Impact on macroscopic parameters - Ajay Kumar Srivastava (UHH - Institut fuer Experimental Physik-Universitaet Hamburg-Un)

16:55 Carrier lifetime variations in MCZ Si during irradiation by 3 - 8 MeV protons at temperatures in the range of 40 -300 K - Juozas Vaitkus (Vilnius University)

17:15 Discussion Session
18:30

18:30 - 23:00
Friday 5 June 2009
09:00
09:00 - 14:40
Contributions

09:00 Status of the Planar Pixel Production at CiS - Anna Macchiolo (Max-Planck-Institut fuer Physik-Unknown-Unknown)

09:20 Test Beam Measurements with 3D-ddtc Silicon Strip Detectors - Michael Koehler (University of Freiburg)

09:40 Evaluation of novel pixel sensors for future tracking detectors - Alessandro La Rosa (CERN)

10:00 3D testbeam at the Diamond light source - Chris Parkes (Glasgow) Chris Parkes (Department of Physics and Astronomy)

11:10 First characterizations of thin SOI and epitaxial n-in-p sensors - Michael Beimforde (Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)

11:30 Online Radiation Dose Measurement System for ATLAS experiment - Igor Mandic (Jožef Stefan Institute)

11:50 CNM status report - Celeste Fleta (University of Glasgow)

12:10 ALIBAVA - Status of distribution and Discussion on further activities - Gianluigi Casse (University of Liverpool)

13:50 Discussion Session FDS

14:20 Discussion Session Pixel and New structures

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