Name: 14th RD50 Workshop
Start: 2009-06-03T13:30:00+02:00
End: 2009-06-05T16:00:00+02:00
Location: Freiburg, Germany

14th RD50 Workshop

from Wednesday 3 June 2009 (13:30) to Friday 5 June 2009 (16:00)
Freiburg, Germany

: Sessions

: Talks

: Breaks

3 Jun 2009

4 Jun 2009

5 Jun 2009

08:45	Full detector systems (until 12:35) ()
08:45	Electrical characteristics of ATLAS07 Series I large detectors. - Marcela Mikestikova (Elementary Particle Division-Institute of Physics-Acad. of Scien) () Slides
09:05	Irradiation program in Prague - status. - Peter Kodys (Faculty of Mathematics and Physics) Dr Peter Kodys (Charles University) () Slides
09:25	Comparison of the CCE properties of microstrip detectors made with different substrates and irradiated with protons and neutrons at different temperature - Affolder Anthony (University of Liverpool) () Slides
09:45	Anneling of Charge Collection in Strip sensors and the Depletion Voltage - Hartmut Sadrozinski (SCIPP, UC santa Cruz) () Slides
10:05	Neutron irradiation for p-type sensors. Detector characterization with ALIBAVA system - Urmila Soldevila () Slides
10:25	--- Coffee break ---
10:55	The avalanche effect in operation of heavily irradiated silicon p-i-n detectors - Vladimir Eremin (Ioffe Physical Technical Institute) () Slides
11:15	Can we claim multiplication effects in irradiated silicon? - Gianluigi Casse (University of Liverpool) () Slides
11:35	Measurements of lorentzangle in highly irradiated silicon-strip-detectors - Michael Schneider (University Karlsruhe) () Slides
11:55	Performance of irradiated MCz detectors in a test beam environment - Teppo Maeenpaeae (Helsinki Institute of Physics HIP) () Slides
12:15	Commissioning the CMS pixel detector with cosmic ray data - Prof. Vincenzo Chiochia (Universitat Zurich) () Slides

09:00	Pixel sensors, 3D and SOI detectors, Radiation Monitoring (until 14:40) ()
09:00	Status of the Planar Pixel Production at CiS - Anna Macchiolo (Max-Planck-Institut fuer Physik-Unknown-Unknown) () Slides
09:20	Test Beam Measurements with 3D-ddtc Silicon Strip Detectors - Michael Koehler (University of Freiburg) () Slides
09:40	Evaluation of novel pixel sensors for future tracking detectors - Alessandro La Rosa (CERN) () Slides
10:00	3D testbeam at the Diamond light source - Dr Chris Parkes (Glasgow) Chris Parkes (Department of Physics and Astronomy) () Slides
10:20	--- coffee break ---
11:10	First characterizations of thin SOI and epitaxial n-in-p sensors - Michael Beimforde (Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik) () Slides
11:30	Online Radiation Dose Measurement System for ATLAS experiment - Igor Mandic (Jožef Stefan Institute) () Slides
11:50	CNM status report - Dr Celeste Fleta (University of Glasgow) () Slides
12:10	ALIBAVA - Status of distribution and Discussion on further activities - Gianluigi Casse (University of Liverpool) () Slides
12:20	--- Lunch break ---
13:50	Discussion Session FDS () Slides
14:20	Discussion Session Pixel and New structures ()

13:30	Welcome (until 13:50) ()
13:30	Welcome to the 14th RD50 Workshop - Ulrich Parzefall (Uni Freiburg) Michael Moll (CERN) Mara Bruzzi (Dipartimento di Fisica) ()
13:50	Pad Detector Characterization and Defect Engineering (until 18:40) ()
13:50	Capacitance Measurements and Depletion Voltage for Annealed Fz and MCz Diodes - Jessica Metcalfe (Department of Physics and Astronomy-University of New Mexico-Unk) () Slides
14:10	Determination of depletion voltage from CV, IV and CCE measurements on Pad Detectors - Katharina Kaska (Technische Universitaet Wien) () Slides
14:30	Electrical Characterization of Irradiated Silicon Diodes at Different Temperature - Vladimir Khomenkov (Hamburg University) () Slides
14:50	TCT-Measurements of mixed irradiated Magentic Czochralski Diodes in the SLHC-Scenario - Robert Eber (IEKP, UNI-Karlsruhe (TH)) () Slides
15:10	Charge collection and trapping effects in n-type and p-type epitaxial silicon diodes after proton irradiation - Joern Lange (Hamburg University) () Slides
15:30	--- Coffee break ---
16:00	Determination of strip detector properties by using Edge-TCT - Gregor Kramberger (Jozef Stefan Institute) () Slides
16:20	New TCT setups at CERN and Louvain - Manuel Fahrer (CERN) () Slides
16:40	Predictions on charge collection efficiency in heavily irradiated Si detectors basing on the approach of active base region - Elena Verbitskaya (Ioffe Physical Technical Inst.) () Slides
17:00	Contributions of Electrons and Holes to Total Collected Charge in Heavily Irradiated Si Pad and Strip/Pixel Detectors: A Comparison Simulation Study - Zheng Li (BNL) () Slides
17:20	Bias on-off proton irradiation results on MCz-Si and Fz-si detectors - Jasu Haerkoenen (Helsinki Institute of Physics HIP) () Slides
17:40	Sensor R&D for an upgrade of the CMS pixel barrel - Jennifer Ann Sibille Jennifer Ann Sibille (University of Kansas-Unknown-Unknown) () Slides
18:00	Discussion Session - Gregor Kramberger (Jozef Stefan Institute) Eckhart Fretwurst (Hamburg University) () Slides
18:40	Collaboration Board Meeting (until 19:40) ()

12:40	--- Lunch Break ---
14:00	Invited Talk on Silicon Solar Cells (until 14:45) ()
14:00	The Future of Silicon Solar Cells - Prof. Eicke Weber (Director of the Fraunhofer Institute for Solar Energy Systems (ISE) and a Professor of physics and applied sciences at the Albert Ludwig University of Freiburg) () Slides
14:45	Defect and Material Characterization (until 18:00) ()
14:45	Prediction of the macroscopic "reverse annealing" using microscopic defect concentrations - Alexandra Junkes (Hamburg University) () Slides
15:05	Annealing induced evolution of defect centers in epitaxial silicon irradiated with high proton fluences - Pawel Kaminski (Institute of Electronic Materials Technology) () Slides
15:25	--- Coffee break ---
15:55	TSC studies on MCz silicon pad detectors irradiated with neutrons - Monica Scaringella (University of Florence) () Slides
16:15	Comparative study of the electric field dependent variations of carrier recombination and drift parameters in MCZ Si detectors irradiated by different fluences of neutrons - Prof. Juozas Vaitkus (Vilnius University) () Slides
16:35	Effect of microscopic defects in n-type irradiated MCz silicon detectors: Impact on macroscopic parameters - Dr Ajay Kumar Srivastava (UHH - Institut fuer Experimental Physik-Universitaet Hamburg-Un) () Slides
16:55	Carrier lifetime variations in MCZ Si during irradiation by 3 - 8 MeV protons at temperatures in the range of 40 -300 K - Prof. Juozas Vaitkus (Vilnius University) () Slides
17:15	Discussion Session ()
18:30	Workshop Dinner (until 23:00) ()

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